Thin Films of Bismuth Vanadates with Modifiable Conduction Properties
Source abstract
Abstract
Thin films of bismuth vanadates are deposited by chemical vapor deposition (CVD) on α-Al 2 O 3 substrates using an O 2 atmosphere and vanadyl(IV) acetylacetonate and triphenylbismuth as precursors. The microstructure of the samples is studied by XRD and Raman spectroscopy and their chemical composition is investigated by XPS and SIMS. AFM is used to analyze the surface morphology of the samples. All the samples show a nonohmic behavior beyond a threshold voltage, V th, which is linearly dependent on the V 4+ /V 5+ ratio. Impedance spectroscopy measurements indicate that the obtained samples are oxide ion conductors at room temperature and that the mechanism of ion conduction occurs by means of hopping between vacancies. Furthermore, ferroelectric−paraelectric transitions take place in the materials at low temperatures.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Catalysis and Oxidation Reactions · Advancements in Solid Oxide Fuel Cells · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Centro di Studio sulla Stabilità e Reattività dei Composti di Coordinazione del CNR, Dipartimento di Chimica Inorganica, Metallorganica ed Analitica, Università di Padova, Via Marzolo, 1-I-35131 Padova, Italy, and Dipartimento di Chimica e Fisica per i Materiali, Università di Brescia, Via Branze, 38-I-25123 Brescia, Italy
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