Enhanced efficiency of Schottky-barrier solar cell with periodically nonhomogeneous indium gallium nitride layer

A two-dimensional finite-element model was developed to simulate the optoelectronic performance of a Schottky-barrier solar cell. The heart of this solar cell is a junction between a metal and a layer of n-doped indium gallium nitride (InξGa1−ξN) alloy sandwiched between a reflection-reducing front window and a periodically corrugated metallic back reflector. The bandgap of the InξGa1−ξN layer was varied periodically in the thickness direction by varying the parameter ξ∈(0,1). First, the frequency-domain Maxwell postulates were solved to determine the spatial profile of photon absorption and, thus, the generation of electron–hole pairs. The AM1.5G solar spectrum was taken to represent the incident solar flux. Next, the drift-diffusion equations were solved for the steady-state electron and hole densities. Numerical results indicate that a corrugated back reflector of a period of 600 nm is optimal for photon absorption when the InξGa1−ξN layer is homogeneous. The efficiency of a solar cell with a periodically nonhomogeneous InξGa1−ξN layer may be higher by as much as 26.8% compared to the analogous solar cell with a homogeneous InξGa1−ξN layer.