X-ray Microscopy Imaging of the Grain Orientation in a Pentacene Field-Effect Transistor
Source abstract
Abstract
We demonstrate the application of scanning transmission X-ray microscopy (STXM) to image the angular distribution of grains in organic semiconductor thin film devices on the example of pentacene field-effect transistors. The in-plane orientation of the molecules in the channel region and underneath the top conducting electrodes was derived from polarization dependent STXM investigations. The method allows the determination of the actual grain size and the correlation of the electronic transport and structural properties on the nanometer length scale.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Force Microscopy Techniques and Applications · Advanced Electron Microscopy Techniques and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
SIMES Center, SLAC National Accelerator Laboratory
Department of Chemical Engineering
SSRL, SLAC National Accelerator Laboratory, Stanford, California 94309
PULSE Center, SLAC National Accelerator Laboratory
Advanced Light Source, Berkeley, California 94720
References (47)
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