journal article·2016-09-27

Distinctive Extrinsic Atom Effects on the Structural, Optical, and Electronic Properties of Bi2S3-xSex Solid Solutions

Ajara A. Rahman, Rong Huang, Luisa Whittaker-Brooks

Chemistry of Materials· Volume 28· Issue 18
Publisher page

Abstract

For many decades, bulk Bi 2 S 3, a key low-bandgap metal chalcogenide semiconductor, has lagged behind in terms of potential applications due to its poor electrical properties. As such, controlling size extrinsic atom interactions in this material might emerge as a viable route to enhance its poor electrical properties. Here, we report the hydrothermal synthesis, structural characterization, and optoelectronic properties of Bi 2 S 3- x Se x solid solutions. Optical characterizations show a decrease in the bandgap of Bi 2 S 3 nanowires as a function of Se concentrations. Furthermore, ensemble electrical transport measurements suggest a pronounced increase in the electrical properties of Bi 2 S 3 nanowires upon Se incorporation. This study points to the importance of carefully controlling the stoichiometry and sizes in Bi 2 S 3 as a way to favorably tune its optoelectronic properties.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · 2D Materials and Applications · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry, University of Utah, 315 South 1400 East, Room 2020, Salt Lake City, Utah 84112, United States

Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York 14853, United States

Funding

American Association for the Advancement of Science · Division of Materials Research

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