Distinctive Extrinsic Atom Effects on the Structural, Optical, and Electronic Properties of Bi2S3-xSex Solid Solutions
Source abstract
Abstract
For many decades, bulk Bi 2 S 3, a key low-bandgap metal chalcogenide semiconductor, has lagged behind in terms of potential applications due to its poor electrical properties. As such, controlling size extrinsic atom interactions in this material might emerge as a viable route to enhance its poor electrical properties. Here, we report the hydrothermal synthesis, structural characterization, and optoelectronic properties of Bi 2 S 3- x Se x solid solutions. Optical characterizations show a decrease in the bandgap of Bi 2 S 3 nanowires as a function of Se concentrations. Furthermore, ensemble electrical transport measurements suggest a pronounced increase in the electrical properties of Bi 2 S 3 nanowires upon Se incorporation. This study points to the importance of carefully controlling the stoichiometry and sizes in Bi 2 S 3 as a way to favorably tune its optoelectronic properties.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · 2D Materials and Applications · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry, University of Utah, 315 South 1400 East, Room 2020, Salt Lake City, Utah 84112, United States
Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York 14853, United States
Funding
American Association for the Advancement of Science · Division of Materials Research
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