journal article·2018-01-23

Substituting Copper with Silver in the BiMOCh Layered Compounds (M = Cu or Ag; Ch = S, Se, or Te): Crystal, Electronic Structure, and Optoelectronic Properties

J. Gamon, D. Giaume, G. Wallez, J.-B. Labégorre, O. I. Lebedev, R. Al Rahal Al Orabi, S. Haller, T. Le Mercier, E. Guilmeau, A. Maignan, P. Barboux

Chemistry of Materials· Volume 30· Issue 2
Publisher page

Abstract

The synthesis of BiAgOCh (Ch = S or Se) compounds has been successfully achieved via the ion exchange of copper with silver in aqueous solutions, starting from the copper parent phase. Optical and electrical measurements of BiAgOCh powders confirm an increase in both the bandgap and the electrical resistivity, as compared to those of the copper compounds. The structure of the BiAgOS phase has been clearly examined. X-ray diffraction synchrotron measurements coupled with advanced high-resolution transmission electron microscopy analysis evidenced a Ag-deficient structure, as well as Bi-rich defects, both types of defects being oppositively charged. Silver atoms are also found in interstial sites, which explains the two-dimensional ionic conductivity. This structural study combined with theoretical calculations explains the intrinsic conductivity behavior of these semiconductors linked to the mutual compensation of both defect types in the structure and to the increase in the hole effective mass. This study shows the feasibility of modifying the optoelectronic properties of the BiMOCh compounds, with the goal of integrating them in heterojunction solar cells. Moreover, it provides very precise insight into the complexity of the relationship between structural defects and optoelectronic properties.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Iron-based superconductors research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Chimie ParisTech, PSL Research University, CNRS, Institut de Recherche de Chimie Paris (IRCP), F-75005 Paris, France

Solvay, Research and Innovation Center Paris, 52 rue de La Haie Coq, 93308 Aubervilliers Cedex, France

Sorbonne University, UPMC Université, Paris 06, 75005 Paris, France

Laboratoire CRISMAT, UMR-CNRS 6508, ENSICAEN, UNICAEN, Normandie Université, 6 bd du Maréchal Juin, F-14050 Caen Cedex 4, France

Solvay, Design and Development of Functional Materials Department, Axel’One, 87 avenue des Frères Perret, 69192 Saint Fons Cedex, France

Department of Physics, Central Michigan University, Mt. Pleasant, Michigan 48859, United States

Funding

Association Nationale de la Recherche et de la Technologie

References (44)

Show source-provided references
1. 10.1006/jssc.1994.128510.1006/jssc.1994.1285 ↗
2. 10.1021/cm702303r10.1021/cm702303r ↗
3. 10.1039/c3ta11222e10.1039/c3ta11222e ↗
4. 10.1039/C4TA04057K10.1039/C4TA04057K ↗
5. 10.1021/cm301492z10.1021/cm301492z ↗
6. 10.1016/j.jssc.2016.02.03310.1016/j.jssc.2016.02.033 ↗
7. 10.3390/ma803104310.3390/ma8031043 ↗
8. 10.1016/j.ssc.2015.01.00710.1016/j.ssc.2015.01.007 ↗
9. 10.1016/j.jssc.2011.11.01310.1016/j.jssc.2011.11.013 ↗
10. 10.1039/c3ee41859f10.1039/c3ee41859f ↗
11. 10.1021/ic801267m10.1021/ic801267m ↗
12. 10.1088/0953-8984/24/26/26600410.1088/0953-8984/24/26/266004 ↗
13. 10.1021/ja107042r10.1021/ja107042r ↗
14. Le Mercier, T.; Barboux, P.; Le Bahers, T.Mixed Bismuth and Copper Oxides and Sulphides for Photovoltaic Use. WO2014049172 A2, 2014.
15. 10.1021/acs.jpcc.5b0555110.1021/acs.jpcc.5b05551 ↗
16. 10.1021/jp409724c10.1021/jp409724c ↗
17. Le Mercier, T.; Barboux, P.; Le Bahers, T.Mixed oxides and sulphides of bismuth and silver for photovoltaic use. WO2015150592A1, 2015.
18. 10.1149/1.208573510.1149/1.2085735 ↗
19. 10.1107/S056774088100587610.1107/S0567740881005876 ↗
20. 10.1021/acs.chemmater.7b0266410.1021/acs.chemmater.7b02664 ↗
21. 10.1002/pssb.1966015022410.1002/pssb.19660150224 ↗
22. 10.1016/S0925-3467(98)00052-410.1016/S0925-3467(98)00052-4 ↗
23. Blaha P. · 2001
24. 10.1524/zkri.220.5.567.6507510.1524/zkri.220.5.567.65075 ↗
25. 10.1103/PhysRevB.41.789210.1103/PhysRevB.41.7892 ↗
26. 10.1016/j.commatsci.2013.08.05310.1016/j.commatsci.2013.08.053 ↗
27. 10.1103/PhysRevLett.100.13640610.1103/PhysRevLett.100.136406 ↗
28. 10.1103/PhysRevLett.102.22640110.1103/PhysRevLett.102.226401 ↗
29. 10.1103/RevModPhys.73.51510.1103/RevModPhys.73.515 ↗
30. 10.1016/j.cpc.2006.03.00710.1016/j.cpc.2006.03.007 ↗
31. 10.1021/ic061041k10.1021/ic061041k ↗
32. 10.1016/j.jallcom.2005.06.07010.1016/j.jallcom.2005.06.070 ↗
33. Blazy P. · Tech. Ing. · 2006 · 396 · 1
34. 10.1016/j.hydromet.2013.02.01010.1016/j.hydromet.2013.02.010 ↗
35. 10.1107/S002188989000839110.1107/S0021889890008391 ↗
36. 10.1107/S002188988608945810.1107/S0021889886089458 ↗
37. 10.1107/S010876819001104110.1107/S0108768190011041 ↗
38. 10.1039/jr958000418610.1039/jr9580004186 ↗
39. 10.1107/S056773947600155110.1107/S0567739476001551 ↗
40. Gamon, J.; Barboux, P.; Le Mercier, T.; Giaume, D.Optimization of doping and interfaces in semiconductors: A two case study of BiCuOS and ZnO. Thesis,Institut de Recherche de Chimie de Paris (IRCP, Chimie ParisTech),Paris, 2017.
41. 10.1021/ic701462210.1021/ic7014622 ↗
42. 10.1039/c2ee22622g10.1039/c2ee22622g ↗
43. Wolpert D. · 201210.1007/978-1-4614-0748-5 ↗
44. 10.1021/jacs.7b0616810.1021/jacs.7b06168 ↗