Air-Stable n-Type Organic Field-Effect Transistors Based on 4,9-Dihydro-s-indaceno[1,2-b:5,6-b′]dithiazole-4,9-dione Unit

4,9-Dihydro- s -indaceno[1,2- b:5,6- b ′]dithiazole-4,9-dione ( IDD ) was designed as a novel electronegative unit, and the π-conjugated compound ( 2C-TzPhTz ) containing it was synthesized as a candidate for air-stable n-type organic field-effect transistor (OFET) materials. Cyclic voltammetry measurements revealed that the IDD unit contributes to lowering the lowest unoccupied molecular orbital (LUMO) energy level. X-ray crystallographic analysis of 2C-TzPhTz showed an almost planar molecular geometry and dense molecular packing, which is advantageous to electron transport. OFETs based on 2C-TzPhTz showed high electron mobility of up to 0.39 cm 2 V –1 s –1, which is one of the highest electron mobilities observed among pentacyclic dione-based materials. Top-contact OFET devices showed operating stability and long-term stability under ambient conditions, attributed to the low-lying LUMO energy level and dense packing in the solid state. Furthermore, bottom-contact OFETs also maintained good electron mobility beyond 0.1 cm 2 V –1 s –1 under air-exposed conditions. We demonstrated that n-type OFETs are more sensitive to H 2 O than O 2 and found that the acquirement of air stability for the 2C-TzPhTz -based OFET is due to the increased stability against not only O 2 but also H 2 O. All of these results indicate that IDD is a potentially useful building unit for high-performance air-stable n-type semiconducting materials.