DataVXChemistry of MaterialsPaper
journal article·2015-09-22

Electrical Properties of Epitaxial Thin Films of Oxyhydrides ATiO3–xHx (A = Ba and Sr)

Guillaume Bouilly, Takeshi Yajima, Takahito Terashima, Wataru Yoshimune, Kousuke Nakano, Cédric Tassel, Yoshiro Kususe, Koji Fujita, Katsuhisa Tanaka, Takafumi Yamamoto, Yoji Kobayashi, Hiroshi Kageyama

Chemistry of Materials· Volume 27· Issue 18
Publisher page
Source abstract

Abstract

We have studied electronic properties of perovskite oxyhydrides ATiO 3– x H x (A = Ba, Sr). Epitaxial thin films of ATiO 3– x H x with various hydride compositions, up to x = 0.58 for Ba and x = 0.45 for Sr, are prepared by the low-temperature CaH 2 reduction of the corresponding oxide films deposited on (LaAlO 3 ) 0.3 (SrAl 0.5 Ta 0.5 O 3 ) 0.7 (LSAT) substrates by pulsed laser deposition. Resistivity measurements for A = Sr show a metallic phase over a wide range of H – composition, implying a substantial stabilization of H 1s orbitals that should be distributed over O 2p orbitals. On the other hand, for A = Ba, a semiconducting behavior is seen up to ∼5–8% of H – substitution. Interestingly, a similar contrasting behavior is observed in a Nb-substituted BaTiO 3 and SrTiO 3, which suggests that a local cation–off centering in lightly doped Ba films creates in-gap states in the band structure (as opposed to the Sr films), hindering the electron transport.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materialsMaterials processing

OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides · Advanced Condensed Matter Physics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan

Institute for Solid State Physics, The University of Tokyo, Chiba 277-8581, Japan

Research Center for Low Temperature and Materials Sciences, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan

The Hakubi Center for Advanced Research, Kyoto University, Yoshida-Ushinomiya-cho, Sakyo-ku, Kyoto 606-8302, Japan

Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan

CREST, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan

Funding

Core Research for Evolutional Science and Technology, Japan Science and Technology Agency · Japan Society for the Promotion of Science

References (44)

Show source-provided references
1. Lines M. E. · 1991
2. 10.1021/ja075843610.1021/ja0758436 ↗
3. 10.1103/PhysRevB.19.359310.1103/PhysRevB.19.3593 ↗
4. 10.1143/JPSJ.79.04470310.1143/JPSJ.79.044703 ↗
5. 10.1103/PhysRevB.64.04511310.1103/PhysRevB.64.045113 ↗
6. 10.1103/PhysRevB.66.16510610.1103/PhysRevB.66.165106 ↗
7. 10.1063/1.140859610.1063/1.1408596 ↗
8. 10.1103/PhysRevB.78.04510710.1103/PhysRevB.78.045107 ↗
9. 10.1063/1.365025410.1063/1.3650254 ↗
10. 10.1103/PhysRevB.82.21410910.1103/PhysRevB.82.214109 ↗
11. 10.1063/1.279838510.1063/1.2798385 ↗
12. 10.1016/0022-4596(91)90149-C10.1016/0022-4596(91)90149-C ↗
13. 10.1103/PhysRevLett.12.47410.1103/PhysRevLett.12.474 ↗
14. 10.1143/JPSJ.65.152910.1143/JPSJ.65.1529 ↗
15. 10.1063/1.185805610.1063/1.1858056 ↗
16. 10.1103/PhysRevLett.104.14760210.1103/PhysRevLett.104.147602 ↗
17. 10.1103/PhysRevB.84.06412510.1103/PhysRevB.84.064125 ↗
18. 10.1038/nmat330210.1038/nmat3302 ↗
19. 10.1021/ic300859n10.1021/ic300859n ↗
20. 10.1021/ja302465c10.1021/ja302465c ↗
21. 10.1103/PhysRevLett.101.20550210.1103/PhysRevLett.101.205502 ↗
22. 10.1016/S0925-8388(01)01625-510.1016/S0925-8388(01)01625-5 ↗
23. 10.1016/S0925-8388(03)00142-710.1016/S0925-8388(03)00142-7 ↗
24. 10.1063/1.302071410.1063/1.3020714 ↗
25. 10.1107/S0365110X6100298910.1107/S0365110X61002989 ↗
26. 10.1063/1.35840410.1063/1.358404 ↗
27. 10.1016/S0925-8388(97)00353-810.1016/S0925-8388(97)00353-8 ↗
28. 10.1038/nmat382410.1038/nmat3824 ↗
29. 10.1063/1.348324310.1063/1.3483243 ↗
30. 10.1063/1.485435510.1063/1.4854355 ↗
31. 10.1103/PhysRevB.75.24110210.1103/PhysRevB.75.241102 ↗
32. 10.1016/0022-1902(65)80037-910.1016/0022-1902(65)80037-9 ↗
33. 10.1021/ja502277r10.1021/ja502277r ↗
34. 10.1002/anie.20140902310.1002/anie.201409023 ↗
35. 10.1002/ange.20140353610.1002/ange.201403536 ↗
36. 10.1002/anie.20140545310.1002/anie.201405453 ↗
37. 10.1021/jacs.5b0483810.1021/jacs.5b04838 ↗
38. 10.1107/S205225251501222110.1107/S2052252515012221 ↗
39. 10.1088/0953-2048/21/12/12200110.1088/0953-2048/21/12/122001 ↗
40. 10.1021/cm062480k10.1021/cm062480k ↗
41. 10.1021/cg401176j10.1021/cg401176j ↗
42. 10.1038/srep0498710.1038/srep04987 ↗
43. 10.1063/1.489198110.1063/1.4891981 ↗
44. 10.1039/C4CE01268B10.1039/C4CE01268B ↗