journal article·2019-09-10

Robust and Stretchable Polymer Semiconducting Networks: From Film Microstructure to Macroscopic Device Performance

Guoyan Zhang, Savannah Lee, Elizabeth Gutiérrez-Meza, Carolyn Buckley, Michael McBride, David A. Valverde-Chávez, Yo Han Kwon, Victoria Savikhin, Hao Xiong, Tim J. Dunn, Michael F. Toney, Zhibo Yuan, Carlos Silva, Elsa Reichmanis

Chemistry of Materials· Volume 31· Issue 17
Publisher page

Abstract

Although stretchable polymer-based devices with promising electrical performance have been produced through the polymer blend strategy, the interplay between the blend film microstructure and macroscopic device performance under deformation has yet to be unambiguously articulated. Here, we discuss the formation of robust semiconducting networks in blended films through a thermodynamic perspective. Thermodynamic behavior along with the linear absorption and photoluminescence measurements predict the competition between polymer phase separation and semiconductor crystallization processes during film formation. Semiconducting films comprised of different pi-conjugated semiconductors were prepared and shown to have mechanical and electronic properties similar to those of films comprised of a model P3HT and PDMS blend. These results suggest that a film’s microstructure and therefore robustness can be refined by controlling the phase separation and crystallization behavior during film solidification. Fine-tuning a film’s electrical, mechanical, and optical properties during fabrication will allow for advanced next-generation of optoelectronic devices.
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Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, 311 Ferst Drive NW, Atlanta, Georgia 30332, United States

School of Chemistry and Biochemistry, Georgia Institute of Technology, 901 Atlantic Drive, Atlanta, Georgia 30332, United States

Stanford Synchrotron Radiation Light Source, Menlo Park, California 94025, United States

College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China

School of Physics, Georgia Institute of Technology, 837 State Street NW, Atlanta, Georgia 30332, United States

School of Material Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive NW, Atlanta, Georgia 30332, United States

Funding

Georgia Institute of Technology · China Scholarship Council · Division of Materials Research · School of Chemical and Biomolecular Engineering, Georgia Institute of Technology · Center for the Science and Technology of Advanced Materials and Interfaces, Georgia Institute of Technology

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