Novel Zinc Oxide Inks with Zinc Oxide Nanoparticles for Low-Temperature, Solution-Processed Thin-Film Transistors
Source abstract
Abstract
Novel zinc oxide (ZnO) inks via mixing a soluble aqueous ZnO precursor with ZnO nanoparticles suitable for low temperature processing of the thin film transistors (TFTs) were prepared. ZnO TFTs produced from the proposed ZnO mixture ink exhibited significantly enhanced field effect mobility of 1.75 cm 2 V –1 s –1 and an on/off ratio of 5.89 × 10 8 even at low processing temperature of 250 °C. Various structural analyses were performed to investigate the influence of ZnO nanoparticles inclusion into the thin film nanostructure on the structural, chemical, and electrical characteristics of the ZnO TFTs.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon 305-600, Republic of Korea
Department of Chemistry, Korea university, Seoul 136-701, Republic of Korea
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