Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors
Abstract
Research context
OpenAlex topics: Graphene research and applications · Semiconductor materials and devices · Diamond and Carbon-based Materials Research
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Affiliations
Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
Department of Electrical Engineering, Kwangwoon University, Seoul 139-701, Korea
Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States
Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
School of Mathematics and Physics, Queen’s University Belfast, Belfast BT71NN, United Kingdom
Department of Chemistry, Chung-Ang University, Seoul 06974, Korea
Stanford Synchrotron Radiation Light Source, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
School of Chemistry and Chemical Engineering, Queen’s University Belfast, Belfast BT95AL, United Kingdom
Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
Funding
Engineering and Physical Sciences Research Council · Kwangwoon University · Ulsan National Institute of Science and Technology · National Research Foundation of Korea · Stanford University · U.S. Department of Energy · Queen's University Belfast