Direct Growth of Dense, Pristine Metal Nanoplates with Well-Controlled Dimensions on Semiconductor Substrates
Source abstract
Abstract
Galvanic reactions between metal ions and semiconductor wafers provide a simple and fast approach to grow high-quality metal nanoplates with controlled sizes and thicknesses and clean surfaces. For example, the image shows an SEM image of silver nanoplates with thicknesses of ∼28 nm and edge lengths of 400–450 nm grown on an n-type (110) GaAs wafer.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Gold and Silver Nanoparticles Synthesis and Applications · Quantum Dots Synthesis And Properties · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439
References (26)
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