Single-Crystalline Cu4Bi4S9 Nanoribbons: Facile Synthesis, Growth Mechanism, and Surface Photovoltaic Properties
Source abstract
Abstract
Cu-based ternary chalcogenides have received great interest as low-cost alternatives to conventional photovoltaic materials. In this work, a large quantity of single-crystalline, orthorhombic phase Cu 4 Bi 4 S 9 nanoribbons are fabricated using a facile solvothermal method. The growth of the Cu 4 Bi 4 S 9 nanoribbons is revealed to be a layer-by-layer stacking of Cu 4 Bi 4 S 9 thin slabs via dodecylamine (DDA) linker, in which the number of stacking layers, and, subsequently, the width-to-thickness ratio, depends on the DDA concentration. Optical investigations show that the as-prepared Cu 4 Bi 4 S 9 nanoribbons have a narrow bandgap of E g = 1.14 eV and enhanced surface photovoltage response in the entire visible wavelength range. It is indicated that these Cu 4 Bi 4 S 9 nanoribbons have potential application in photodetectors, solar cells, or other optoelectronic devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Physics and Microelectronics Science, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, People’s Republic of China
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371 Singapore
Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People’s Republic of China
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