Li2PbGeS4 and Li2EuGeS4: Polar Chalcopyrites with a Severe Tetragonal Compression
Source abstract
Abstract
Li 2 PbGeS 4 and Li 2 EuGeS 4 form by dissolving Pb/Eu and Ge in molten Li 2 S 9 at 600−650 °C. They crystallize in the tetragonal, noncentrosymmetric space group I-42m with a = 6.5224(5) Å, c = 7.7603(8) Å, Z = 2, R1 = 0.0253, and wR2 = 0.0646 for Li 2 PbGeS 4 and a = 6.5447(4) Å, c = 7.6960(6) Å, Z = 2, R1 = 0.0224, and wR2 = 0.0551 for Li 2 EuGeS 4 . These polar compounds possess a compressed chalcopyrite-like structure. The compression occurs along the c axis and results in an expanded coordination sphere for Pb and Eu that can be described as a distorted dodecahedron. The Pb/EuS 8 dodecahedra share edges and corners with the GeS 4 tetrahedra in such a way as to create small tunnels down the c axis in which the lithium cations reside. The Li + cations are surrounded by four S 2 - anions that create a highly distorted tetrahedral pocket. Both compounds are semiconductors with indirect band gaps of 2.41 and 2.54 eV, respectively. We also discuss the results of an LAPW band structure calculation for Li 2 PbGeS 4 and report infrared spectroscopic characterization.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Crystal Structures and Properties · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry and Center for Fundamental Materials Research and Department of Physics and Astronomy and Center for Fundamental Materials Research, Michigan State University, East Lansing, Michigan 48824
References (41)
Show source-provided references
1. Kanatzidis M. G. · Chem. Mater. · 1990 · 2 · 36310.1021/cm00010a010 ↗
2. Sunshine S. A. · J. Am. Chem. Soc. · 1987 · 109 · 620410.1021/ja00254a060 ↗
3. Pell M. A. · Chem. Ber. · 1997 · 130 · 8
4. Bensch W. · Chem. Ber. · 1996 · 129 · 1210
5. Aitken J. A. · Chem. Mater. · 1998 · 10 · 393510.1021/cm980364e ↗
6. Axtell E. A. · Inorg. Chem. · 1998 · 37 · 558710.1021/ic980360b ↗
7. Huang F. Q. · Inorg. Chem. · 2001 · 40 · 1398
8. Matsushita Y. · Z. Naturforsch. · 1998 · 53 · 3010.1515/znb-1998-0107 ↗
9. Aitken J. A. · J. Solid State Chem. · 2000 · 153 · 16910.1006/jssc.2000.8767 ↗
10. Aitken J. A. · Inorg. Chem. · 2000 · 39 · 153310.1021/ic991090f ↗
11. Schimek G. L. · J. Solid State Chem. · 1996 · 123 · 28410.1006/jssc.1996.0179 ↗
12. Schimek G. L. · Acta Crystallogr. · 1997 · 53 · 992
13. Auernhammer M. · J. Solid State Chem. · 1993 · 106 · 42610.1006/jssc.1993.1302 ↗
14. Teske C. L. · Z. Naturforsch. · 1979 · 34 · 547
15. Gard J. A. · J. Solid State Chem. · 1973 · 7 · 427
16. AgGa · MRS Bull. · 1998 · 23 · 36
17. CuInSe · Annu. Rev. Mater. Sci. · 1997 · 27 · 653
18. Feher F. · Germany · 1954 · 1 · 281
19. 1995
20. Singh, D.Planewaves, Pseudopotentials, and the LAPW Method; Kluwer Academic: Boston, 1994.10.1007/978-1-4757-2312-0 ↗
21. Hohenberg P. · Phys. Rev. · 1964 · 136 · B87110.1103/PhysRev.136.B864 ↗
22. Perdew J. P. · Phys. Rev. Lett. · 1996 · 77 · 386810.1103/PhysRevLett.77.3865 ↗
23. Blaha P. · 1999
24. Koelling D. D. · J. Phys. · 1980 · 13 · 6147
25. SMARTandSAINT: Data Collection and Processing Software for theSMART system; Siemens Analytical X-ray Instruments Inc., 1995.
26. Kratz T. · Z. Kristallogr. · 1989 · 186 · 169
27. Garin J. · Acta Crystallogr. · 1972 · 28 · 367410.1107/S0567740872008568 ↗
28. Hall S. R. · Can. Mineral. · 1978 · 16 · 137
29. Goryunova N. · 1965
30. Parthé E. · Acta Crystallogr. · 1969 · 25 · 116410.1107/S0567740869003670 ↗
31. (c) Parthé, E.Elements of Inorganic Structural Chemistry; K. Sutter Parthe: Lancy, Switzerland, 1996; pp 41−58 and references therein.
32. Parthé · 1994 · 1 · 360
33. Wold A. · 1993
34. Hauck J. · J. Solid State Chem. · 1998 · 138 · 34110.1006/jssc.1998.7793 ↗
35. Hahn H. · Z. Anorg. Allg. Chem. · 1953 · 271 · 17010.1002/zaac.19532710307 ↗
36. Zahn G. · Cryst. Res. Technol. · 1988 · 23 · 506
37. Teske C. L. · Z. Anorg. Allg. Chem. · 1976 · 427 · 20410.1002/zaac.654270303 ↗
38. Tampier M. · Z. Anorg. Allg. Chem. · 2001 · 627 · 32010.1002/1521-3749(200103)627:3<312::AID-ZAAC312>3.0.CO;2-U ↗
39. Teske C. L. · Z. Anorg. Allg. Chem. · 1976 · 419 · 7610.1002/zaac.19764190112 ↗
40. Teske C. L. · Z. Naturforsch. · 1979 · 34 · 389
41. Pankove, J. I.Optical Processes in Semiconductors; Dover Publications: New York, 1971; pp 34−42.