journal article·2010-05-25

Sb2Te3 Nanoparticles with Enhanced Seebeck Coefficient and Low Thermal Conductivity

Jing Chen, Ting Sun, DaoHao Sim, Haiyang Peng, Huatao Wang, Shufen Fan, Huey Hoon Hng, Jan Ma, Freddy Yin Chang Boey, Sean Li, Majid Kabiri Samani, George Chung Kit Chen, Xiaodong Chen, Tom Wu, Qingyu Yan

Chemistry of Materials· Volume 22· Issue 10
Publisher page

Abstract

Nanostructured thermoelectric semiconductors represent a promising new direction that can further increase energy conversion efficiency, which requires the realization of thermoelectric nanocrystals with size comparable to their de Broglie wavelength while maintaining a high electrical conductivity. Here, we demonstrate a new facile process to grow self-assembled Sb 2 Te 3 nanoparticles with controlled particle size and enhanced thermoelectric properties by using a catalyst-free vapor transport growth technique. The samples show much more enhanced Seebeck coefficients than that of bulk Sb 2 Te 3 with similar charge carrier concentration. Meanwhile, the thermal conductivity measurements with pulse photothermal reflectance suggest that the these Sb 2 Te 3 nanoparticle films show much reduced thermal conductivity as compared to that of bulk Sb 2 Te 3 . The discussed approach is promising for realizing new types of highly efficient thermoelectric semiconductors.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal Radiation and Cooling Technologies · Advanced Thermodynamics and Statistical Mechanics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

School of Materials Science and Engineering, University of New South Wales, NSW 2052, Australia

School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

References (49)

Show source-provided references
1. Tritt T. M. · Science · 1999 · 283 · 80410.1126/science.283.5403.804 ↗
2. Kim, T. S.; Chun, B. S.; Lee, J. K.; Jung, H. G.InThermoelectric properties of gas atomized p-type Sb2Te3−25% Bi2Te3 alloys; 12th International Symposium on Metastable and Nano-Materials (ISMANAM-2005), Paris, France, July 03−07, 2005; pp710−713.10.1016/j.jallcom.2006.08.251 ↗
3. Venkatasubramanian R. · Nature · 2001 · 413 · 59710.1038/35098012 ↗
4. Harman T. C. · Science · 2002 · 297 · 222910.1126/science.1072886 ↗
5. Dresselhaus M. S. · Adv. Mater. · 2007 · 19 · 104310.1002/adma.200600527 ↗
6. Yan Q. Y. · Chem. Mater. · 2008 · 20 · 629810.1021/cm802104u ↗
7. Wang R. Y. · Nano Lett. · 2008 · 8 · 228310.1021/nl8009704 ↗
8. Poudel B. · Science · 2008 · 320 · 63410.1126/science.1156446 ↗
9. Hsu K. F. · Science · 2004 · 303 · 81810.1126/science.1092963 ↗
10. Hochbaum A. I. · Nature · 2008 · 451 · 16310.1038/nature06381 ↗
11. Wang W. Z. · J. Am. Chem. Soc. · 2005 · 127 · 1379210.1021/ja054861p ↗
12. Groshens T. J. · Chem. Mater. · 1994 · 6 · 72710.1021/cm00042a005 ↗
13. Xiao F. · Electrochim. Acta · 2008 · 53 · 810310.1016/j.electacta.2008.06.015 ↗
14. Meister S. · Nano Lett. · 2006 · 6 · 151410.1021/nl061102b ↗
15. Lee J. S. · J. Am. Chem. Soc. · 2008 · 130 · 625210.1021/ja711481b ↗
16. Sootsman J. R. · Angew. Chem., Int. Ed. · 2008 · 47 · 861810.1002/anie.200803934 ↗
17. 10.1063/1.203720910.1063/1.2037209 ↗
18. Gorsse S. · Chem. Mater. · 2010 · 22 · 98810.1021/cm901862m ↗
19. Urban J. J. · Nat. Mater. · 2007 · 6 · 11510.1038/nmat1826 ↗
20. Drasar C. · J. Solid State Chem. · 2005 · 178 · 130110.1016/j.jssc.2005.02.005 ↗
21. Dhar S. N. · Philos. Mag. Lett. · 2002 · 82 · 58110.1080/09500830210158792 ↗
22. Talapin D. V. · Science · 2005 · 310 · 8610.1126/science.1116703 ↗
23. Zhou W. · Adv. Mater. · 2009 · 21 · 319610.1002/adma.200900312 ↗
24. Chen G. · Thin Solid Films · 1999 · 339 · 5810.1016/S0040-6090(98)01062-1 ↗
25. Zhao, Y. M.; Chen, G.; Wang, S. Z.; Yoon, S. F.InThermal characterization of GaAsN thin films by pulsed photothermal reflectance technique; Symposium on Nanoscale Imaging and Characterization of Materials, Singapore, Singapore, Dec 07−12, 2003;Yeadon, M.; Gong, H.; Boothroyd, C. B., Eds.World Scientific Publ Co Pte Ltd:Singapore, Singapore, 2003; pp781−787.10.1142/S0219581X0400267X ↗
26. Zhao Y. M. · Thin Solid Films · 2004 · 450 · 35210.1016/j.tsf.2003.11.289 ↗
27. Hay B. · Int. J. Thermophys. · 2009 · 30 · 127010.1007/s10765-009-0560-z ↗
28. Zhang Z. · Metall. Mater. Trans. A · 2003 · 34 · 134910.1007/s11661-003-0246-2 ↗
29. Shi W. D. · Adv. Mater. · 2008 · 20 · 189210.1002/adma.200702003 ↗
30. Frumar M. · 2005
31. Wang G. F. · Appl. Phys. Lett. · 2006 · 89 · 3
32. Yan Q. Y. · Adv. Mater. · 2005 · 17 · 223310.1002/adma.200500949 ↗
33. Ross F. M. · Phys. Rev. Lett. · 1998 · 80 · 98410.1103/PhysRevLett.80.984 ↗
34. Mo Y. W. · Phys. Rev. Lett. · 1990 · 65 · 102010.1103/PhysRevLett.65.1020 ↗
35. Huang H. C. · J. Appl. Phys. · 1998 · 84 · 363610.1063/1.368539 ↗
36. Surgers C. · Thin Solid Films · 1994 · 239 · 5110.1016/0040-6090(94)90107-4 ↗
37. Nagao Y. · Phys. Rev. B · 2007 · 7610.1103/PhysRevB.76.144203 ↗
38. Brown S. R. · Chem. Mater. · 2008 · 20 · 341210.1021/cm703616q ↗
39. Muthukumarasamy N. · Sol. Energy Mater. Sol. Cells · 2008 · 92 · 85110.1016/j.solmat.2008.02.005 ↗
40. Snyder G. J. · Nat. Mater. · 2008 · 7 · 10510.1038/nmat2090 ↗
41. Rajasekar K. · Ionics · 2008 · 14 · 6910.1007/s11581-007-0146-3 ↗
42. Martin J. · Phys. Rev. B · 2009 · 79 · 510.1103/PhysRevB.79.115311 ↗
43. Rowe D. M. · 1995
44. Boukai A. I. · Nature · 2008 · 451 · 16810.1038/nature06458 ↗
45. Wang W. · J. Nanosci. Nanotechnol. · 2008 · 8 · 45210.1166/jnn.2008.062 ↗
46. Scheele M. · Adv. Funct. Mater. · 2009 · 19 · 347610.1002/adfm.200901261 ↗
47. Dirmyer M. R. · Small · 2009 · 5 · 93310.1002/smll.200801206 ↗
48. Yang L. · J. Appl. Phys. · 2009 · 106
49. Li D. · J. Phys. D: Appl. Phys. · 2009 · 42