High Performance n-Type Field-Effect Transistors Based on Indenofluorenedione and Diindenopyrazinedione Derivatives
Source abstract
Abstract
Novel indenofluorenedione and diindenopyrazinedione derivatives were developed as n-type semiconductors. Introduction of the halogen goups and/or a pyrazine ring to the indenofluorenedione framework increased the electron affinity, leading to the higher n-type performances. The top-contact device using 2b showed the highest performance; µ = 0.17 cm2/(V s) and Vth = 17 V.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan, and NHK Science and Technical Research Laboratories, Kinuta, Setagata-ku, Tokyo 157-8510, Japan
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