Solution-Processed Metal Chalcogenide Films for p-Type Transistors
Source abstract
Abstract
Thin films of the semiconductor copper indium diselenide (CuInSe2) have been prepared at low temperature from a soluble precursor and incorporated into the first p-type thin-film transistors (TFTs) with spin-cast all-inorganic channels.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
IBM T.J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598
References (36)
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33. Thickness was determined by profilometry for thick films and AFM with verification by MEIS for thin films. Films from 50 to 100 nm thick were obtained by increasing the precursor concentration to ∼115 mg/mL and varying the spinning speed between 2000 and 3500 rpm. Thicker films (up to 200 nm) were obtained by spinning a second layer of precursor on top of the first, using the same spin-casting conditions. The original film must first be thermally converted to CuInSe2to avoid redissolution. A second decomposition step was performed on the final film. The film roughness remained unchanged between layers, indicating this procedure might be extended to produce films of even greater thickness, which might be more optimal for photovoltaic applications.19-21
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