journal article·2020-03Open access

MODELING OF THE INDIUM GALLIUM NITRIDE TANDEM SOLAR CELL PHOTOVOLTAIC PERFORMANCES FOR CONCENTRATOR

Laboratory of Semiconductor Devices Physics, University Tahri Mohammed of Bechar, Algeria, N. BELLAL, B. DENNAI, Laboratory of Renewable Energy Development and their Applications in the Saharan areas, Faculty of Exact Sciences, University Tahri Mohammed Bechar

Journal of Ovonic Research· Volume 16· Issue 2

Abstract

The objective of this modeling investigation is to optimize a solar cell tandem device under the AM1.5G spectrum, based InGaN cells for concentration ratio. In this paper describes the role of the concentration photovoltaic in InGaN dual-junction solar cell. this study, the top cell is made of InGaN (1.64 eV) while the bottom cell is made of InGaN (0.94 eV).the reported for purpose was to extracted the solar cell parameters(photocurrent, open circuit voltage and efficiency) in a fairly wide range of concentration levels (1 to30 sun).Our calculation shows that the efficiency can be improved from (23.87%) for a tandem solar cell with (X=1sun) up to (25.72%) for same device solar cell with (X=30sun) for AM.1.5 illumination and room temperature.
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Research context

OpenAlex topics: solar cell performance optimization · Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films

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