Morphological Origin of High Mobility in Pentacene Thin-Film Transistors
Source abstract
Abstract
Thin-film transistors (TFTs) were fabricated using vacuum deposited pentacene as the semiconductor. Field-effect mobilities as high as 0.4 cm2 V-1 s-1 were obtained, which were attributed to the single-crystal nature of the deposited films.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Advanced Memory and Neural Computing · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Bell Laboratories, Lucent Technologies 600 Mountain Ave. Murray Hill, New Jersey 07974
References (26)
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