Source abstract
Abstract
Preferred crystallographic orientation in polycrystalline films is desirable for efficient charge carrier transport in metal halide perovskites and semiconductors. However, the mechanisms that determine the preferred orientation of halide perovskites are still not well understood. In this work, we investigate crystallographic orientation in lead bromide perovskites. We show that the solvent of the precursor solution and organic A-site cation strongly affect the preferred orientation of the deposited perovskite thin films. Specifically, we show that the solvent, dimethylsulfoxide, influences the early stages of crystallization and induces preferred orientation in the deposited films by preventing colloidal particle interactions. Additionally, the methylammonium A-site cation induces a higher degree of preferred orientation than the formamidinium counterpart. We use density functional theory to show that the lower surface energy of the (100) plane facets in methylammonium-based perovskites, compared to the (110) planes, is the reason for the higher degree of preferred orientation. In contrast, the surface energy of the (100) and (110) facets is similar for formamidinium-based perovskites, leading to lower degree of preferred orientation. Furthermore, we show that different A-site cations do not significantly affect ion diffusion in bromine-based perovskite solar cells but impact ion density and accumulation, leading to increased hysteresis. Our work highlights the interplay between the solvent and organic A-site cation which determine crystallographic orientation and plays a critical role in the electronic properties and ionic migration of solar cells.
Source: openalex_inverted_index · Quality: baseline
Affiliations
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
National Synchrotron Light Source II, Brookhaven National Lab, Upton, New York 11973, United States
Department of Structure and Dynamics of Energy Materials, Helmholtz Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Institut de Ciència dels Materials, Universidad de València, C/J. Beltran 2, Paterna 46980 Valencia, Spain
Freie Universitaet Berlin, Institute of Geological Sciences, Malteser Str. 74-200, 12249 Berlin, Germany
Funding
Georgia Institute of Technology · China Scholarship Council · National Natural Science Foundation of China · National Science Foundation