Synthesis and characterization of semi-degenerated Al:CdO thin films for photodetector applications using a cost-effective approach

Department of Medical and Industrial Materials Science, College of Applied Science, University of Technology- Iraq; M. A. Hassan; A. A. Hadi; Department of Laser Science and Technology, College of Applied Science, University of Technology- Iraq; K. I. Hassoon; Department of Laser Science and Technology, College of Applied Science, University of Technology- Iraq; Z. G. Mohammadsalih; Applied Science Research Unit, College of Applied Science, University of Technology- Iraq; N. S. Sadeq; Department of Medical and Industrial Materials Science, College of Applied Science, University of Technology- Iraq

doi:10.15251/jor.2025.216.725

journal article·2025-11-15Open access

Synthesis and characterization of semi-degenerated Al:CdO thin films for photodetector applications using a cost-effective approach

Department of Medical and Industrial Materials Science, College of Applied Science, University of Technology- Iraq, M. A. Hassan, A. A. Hadi, Department of Laser Science and Technology, College of Applied Science, University of Technology- Iraq, K. I. Hassoon, Department of Laser Science and Technology, College of Applied Science, University of Technology- Iraq, Z. G. Mohammadsalih, Applied Science Research Unit, College of Applied Science, University of Technology- Iraq, N. S. Sadeq, Department of Medical and Industrial Materials Science, College of Applied Science, University of Technology- Iraq

Journal of Ovonic Research· Volume 21· Issue 6

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Source abstract

Abstract

An inclined-angle chemical spray pyrolysis method deposited 3.0% Al-doped CdO thin films on two types of substrates (silicon and glass). The films showed high conductivity, stable cubic structure with dominant (200) orientation, and homogeneous spherical grains of 100–200 nm. Their visible absorption coefficient was ~104 cm–1 and bandgap 2.29 eV. Two heterojunctions n-CdO/n-Si and n-CdO/p-Si were fabricated. The n-CdO/n-Si junction exhibited rectifying behavior with a reverse-bias gain of 6.7, visible-light detection, and low resistance. n-CdO/p-Si junction achieved a photoresponse of 18×10–4 A/W at 520 nm compared to 5×10–4 A/W. These characteristics make the films promising for optoelectronic applications.

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Research context

Ceramics & glasses Electronic materials

OpenAlex topics: Semiconductor materials and interfaces · ZnO doping and properties · Chalcogenide Semiconductor Thin Films

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