Growth of Ultralong ZnO Nanowires on Silicon Substrates by Vapor Transport and Their Use as Recyclable Photocatalysts

We report the growth of ultralong ZnO nanowires on silicon (100) substrates via the gold-catalyzed vapor transport approach. An ample supply of zinc vapor generated through carbothermal reduction of ZnO powder at 917 °C and a suitable amount of oxygen facilitate the rapid growth of nanowires. These ZnO nanowires are extremely long with lengths of 85−100 μm, and exhibit an overall vertical orientation. The nanowires have largely diameters of 250−400 nm. Crystal structure analysis indicates typical ZnO nanowire growth along the [0001] direction. The band gap of these nanowires was determined to be 3.22 eV. These nanowires show a relatively weak near-band-edge emission peak at 390 nm, and a significant oxygen vacancy-related emission band at 495 nm. Good photocatalytic activity of these nanowires on substrates toward the photodegradation of rhodamine B and 4-chlorophenol was demonstrated. Furthermore, we showed that these nanowires on substrates can serve as effective and convenient recyclable photocatalysts. Only a slight decrease in the photodecomposition rate was observed after 10 cycles of the photocatalysis experiment. The photocatalysts also work well under natural sunlight.