Structural, optical, and electrical analysis of tailoring Bi2-xSbxTe3 thin films

Department of Physics, Faculty of Science and Technology, Chiang Mai Rajabhat University, Chiang Mai, 50300, Thailand; P. Chaiworn; S. Kaewja; Department of Physics, Faculty of Science and Technology, Chiang Mai Rajabhat University, Chiang Mai, 50300, Thailand; E. Wongrat; School of Science, University of Phayao, Phayao, 56000, Thailand; C. Wichasilp; Department of Physics, Faculty of Science and Technology, Chiang Mai Rajabhat University, Chiang Mai, 50300, Thailand; A. Tubtimtae; Division of Physics, Department of Physical and Material Sciences, Faculty of Liberal Arts and Science, Kasetsart University Kamphaeng Saen Campus, Nakhon Pathom 73140, Thailand

doi:10.15251/cl.2024.215.423

journal article·2024-05-15Open access

Structural, optical, and electrical analysis of tailoring Bi2-xSbxTe3 thin films

Department of Physics, Faculty of Science and Technology, Chiang Mai Rajabhat University, Chiang Mai, 50300, Thailand, P. Chaiworn, S. Kaewja, Department of Physics, Faculty of Science and Technology, Chiang Mai Rajabhat University, Chiang Mai, 50300, Thailand, E. Wongrat, School of Science, University of Phayao, Phayao, 56000, Thailand, C. Wichasilp, Department of Physics, Faculty of Science and Technology, Chiang Mai Rajabhat University, Chiang Mai, 50300, Thailand, A. Tubtimtae, Division of Physics, Department of Physical and Material Sciences, Faculty of Liberal Arts and Science, Kasetsart University Kamphaeng Saen Campus, Nakhon Pathom 73140, Thailand

Chalcogenide Letters· Volume 21· Issue 5

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Abstract

Bismuth antimony telluride (Bi2-xSbxTe3) thin films were synthesized using chemical bath deposition (CBD) with various amounts of antimony. The structural, morphological, and optical properties of Bi2-xSbxTe3 thin films have been scrutinized using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), UV-Vis spectrophotometry. A higher amount of Sb contents can be observed the Sb0.405Te0.595, BiTe, and Bi4Te3 phases consisted in the pattern. Meanwhile, the energy band gaps are tuned in the range of 2.95 to 3.30 eV. Finally, measurement of resistance with various temperatures for activation energy (EAC) estimation was performed. The highest EAC value was equal to 0.654 eV for 0.8 g SbCl3 as a precursor of Sb atom incorporated in the Bi2Te3 lattice.

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Materials processing

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Magnetic and transport properties of perovskites and related materials · Topological Materials and Phenomena

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