Synthesis and characterization of manganese-doped FeS2 thin films via chemical spray pyrolysis
Source abstract
Abstract
A thin film of iron disulfide (FeS2) and Mn-doped was prepared using the chemical spray pyrolysis (CSP) method at a constant temperature of the glass substrate at around 400 °C. According to XRD examination, films were structurally cubic oriented with a predominant planar orientation (201). The doping of Mn ions in the FeS2 host matrix was confirmed by a minor shift of the diffraction peak towards the lower 2θ values. The surface of the produced film for pyrite was homogeneous, according to the AFM investigations. According to the XRD data, the predicted grain size altered as the consistent manganese increased. When compared to undoped FeS2 thin films, the Mn2+- doped FeS2 thin films' desired bandgap energy showed a red shift.
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Research context
OpenAlex topics: Metal Extraction and Bioleaching · Metallurgical Processes and Thermodynamics · Minerals Flotation and Separation Techniques
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References (41)
Show source-provided references
1. [1] A.Ennaoui, S. Fiechter, H. Goslowsky et al. J. Electrochem. Soc., 132: 1579(1985); https://doi.org/10.1149/1.211416810.1149/1.2114168 ↗
2. [2] I.J.Ferrer, D.M. Nevskaia, d.L. Heras et al. Solid State Commun., 74: 913(1990); https://doi.org/10.1016/0038-1098(90)90455-K10.1016/0038-1098(90)90455-K ↗
3. [3] E.A. Botchway, F.K. Ampong, I. Nkrumah, F.K. Boakye, R.K. Nkum, Open J. Appl. Sci. 9, 725(2019); https://doi.org/10.4236/ojapps.2019.9905910.4236/ojapps.2019.99059 ↗
4. [4] M. Eghbalnia, D.G. Dixon, J. Solid State Electrochem. 17, 235(2013); https://doi.org/10.1007/s10008-012-1873-610.1007/s10008-012-1873-6 ↗
5. [5] P. Xiao, X.-L. Fan, H. Zhang, X. Fang, L.-M. Liu, J. Alloys Compd. 629, 43(2015); https://doi.org/10.1016/j.jallcom.2014.11.21710.1016/j.jallcom.2014.11.217 ↗
6. [6] I.J. Ferrer, C. Heras, C. Sanchez, Appl. Surf. Sci. 70-71, 588(1993); https://doi.org/10.1016/0169-4332(93)90585-Y10.1016/0169-4332(93)90585-Y ↗
7. [7] I.J. Ferrer, C. Heras, C. Sanchez, J. Phys. Condens. Matter 7, 2115 (1995); https://doi.org/10.1088/0953-8984/7/10/01810.1088/0953-8984/7/10/018 ↗
8. [8] R. Chauhan, A. Kumar, R.P. Chaudhary, Spectrochim. Acta Part A 98, 256(2012); https://doi.org/10.1016/j.saa.2012.08.00910.1016/j.saa.2012.08.009 ↗
9. [9] G. Kaur, D. Pooja, M. Kumar, A. Thakur, R. Bala, A. Kumar, Phys. Chem. Chem.Phys.19, 32412(2017); https://doi.org/10.1039/C7CP06289C10.1039/C7CP06289C ↗
10. [10] J.Y. Zhao, J.M. Zhang, J. Phys. Chem. C 121, 19334(2017); https://doi.org/10.1021/acs.jpcc.7b0456810.1021/acs.jpcc.7b04568 ↗
11. [11] P. Diaz-Chao, I.J. Ferrer, C. Sanchez, Thin Solid Films 516, 7116(2008); https://doi.org/10.1016/j.tsf.2007.12.02810.1016/j.tsf.2007.12.028 ↗
12. [12] G. Kaur, B. Singh, P. Singh, K. Singh, A. Thakur, M. Kumar, R. Bala, A. Kumar, Chem. Select 2, 2166(2017); https://doi.org/10.1002/slct.20170008710.1002/slct.201700087 ↗
13. [13] W.L. Liu, X.H. Rui, H.T. Tan, C. Xu, Q.Y. Yan, H.H. Hng, RSC Adv. 4, 48770(2014); https://doi.org/10.1039/C4RA08527B10.1039/C4RA08527B ↗
14. [14] M. Li, Q. Yao, G. Zhou, X. Qu, C. Mu, S. Fu, CrystEngComm 13, 5936(2011); https://doi.org/10.1039/c1ce05478c10.1039/c1ce05478c ↗
15. [15] R. Ahuja, A. Sidhu, A. Bala, Eur. J. Plant Pathol. 155, 163(2019); https://doi.org/10.1007/s10658-019-01758-310.1007/s10658-019-01758-3 ↗
16. [16] S. Kawai, R. Yamazaki, S. Sobue, E. Okuno, M. Ichimura, Apl. Mater. 2, 032110(2014); https://doi.org/10.1063/1.486903510.1063/1.4869035 ↗
17. [17] L. Charpentier, P. Masset, Mater. Sci. Forum 654-656, 2398 (2010); https://doi.org/10.4028/www.scientific.net/MSF.654-656.239810.4028/www.scientific.net/MSF.654-656.2398 ↗
18. [18] I.G. Orletskii, P.D. Mar'yanchuk, E.V. Maistruk, M.N. Solovan, V.V. Brus, Phys. Solid State 58, 37(2016); https://doi.org/10.1134/S106378341601022410.1134/S1063783416010224 ↗
19. [19] S. Uchiyama, Y. Ishikawa, T. Doe, Y. Uraoka, IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), pp. 28(2015); https://doi.org/10.1109/IMFEDK.2015.715853310.1109/IMFEDK.2015.7158533 ↗
20. [20] R.J. Soukup, P. Prabukanthan, N.J. Ianno, A. Sarkar, C.A. Kamler, D.G. Sekora, J. Vac. Sci. Technol., A 29, 011001(2011); https://doi.org/10.1116/1.351773910.1116/1.3517739 ↗
21. [21] M.L. Li, Q.Z. Yao, G.T. Zhou, X.F. Qu, C.F. Mu, S.Q. Fu, CrystEngComm 13, 5936(2011); https://doi.org/10.1039/c1ce05478c10.1039/c1ce05478c ↗
22. [22] Z. Mutlu, B. Debnath, S. Su, C. Li, M. Ozkan, K.N. Bozhilov, R.K. Lake, C.S. Ozkan, J. Mater. Chem. C6, 4753(2018); https://doi.org/10.1039/C8TC00584B10.1039/C8TC00584B ↗
23. [23] B.D. Cullity, S.R. Stock, Elements of X-ray Diffraction, third ed., Prentice-Hall, New Jersey (2001).
24. [24] M. Zebarjad, F. Jamali-Sheini, R. Yousefi, Ceram. Int. 47, 21969-21981(2021); https://doi.org/10.1016/j.ceramint.2021.04.21510.1016/j.ceramint.2021.04.215 ↗
25. [27] R. S. Ali, S. A. A. Mohammed, A. H. and Mohammed. IOP Conference Series: Materials Science and Engineering, , 928(7), 072154 (2020). https://doi: 10.1088/1757-899X/928/7/07215410.1088/1757-899X/928/7/072154 ↗
26. [28] A. A. Khadayeir, E. S. Hassan, T. H. Mubarak, S.S. Chiad, N. F. Habubi, M.O. Dawood and I. A. Al-Baidhany. Journal of Physics: Conference Series, 1294 (2) 022009 (2019). https://doi: 10.1088/1742-6596/1294/2/02200910.1088/1742-6596/1294/2/022009 ↗
27. [29] V. Mote, Y. Purushotham, and B. Dole, J. Theor. and Appl. Phys., 6, 1-8(2012); https://doi.org/10.1186/2251-7235-6-610.1186/2251-7235-6-6 ↗
28. [30] P. Chelvanathan, Y. Yusoff, F. Haque, M. Akhtaruzzaman, M. Alam, Z. Alothman, M. Rashid, K. Sopian, and N. Amin, Appl. Surf. Sci., 334, 138-144(2015); https://doi.org/10.1016/j.apsusc.2014.08.15510.1016/j.apsusc.2014.08.155 ↗
29. [31] C. De las Heras, J. de Vidales, I. Ferrer, and C. Sánchez, J. Mater. Res., 11, 211-220(1996); https://doi.org/10.1557/JMR.1996.002610.1557/JMR.1996.0026 ↗
30. [32] R. Muhammad, A. M. Rana, M. Hafeez, E. Ahmed, A. S. Bhatti, M. F. Wasiq, M. Y. Nadeem. Acta Chim. Slov, 61, 80-86(2014).
31. [33] J. G. Yoon, H.K. Oh, and S.J. Lee, Phys. Rev. B, 60, 2839(1999).a. Adachi, A. Kudo1, T. Sakatal, Bull. Chem. Soc. Jpn. 68, 3283-3288(1995); https://doi.org/10.1103/PhysRevB.60.283910.1103/PhysRevB.60.2839 ↗
32. [34] R. S. Ali, N. A. H. Al Aaraji, E. H. Hadi, N.F. Habubi and Chiad, S.S. Journal of Nanostructuresthis link is disabled, 10(4), 810-816 (2020). https://doi: 10.22052/jns.2020.04.014
33. [35] R. S. Ali, M. K. Mohammed, A.A. Khadayeir, Z. M. Abood, N. F. Habubi and Chiad, S.S. Journal of Physics: Conference Series, 1664 (1), 012016 (2020). https://doi:10.1088/1742-6596/1664/1/01201610.1088/1742-6596/1664/1/012016 ↗
34. [36] S.A. Darveau, In Proceedings of the 35th Photovoltaics specialists Conference, Institute of Electrical and Electronics Engineers (IEEE), pp. 002965-002969(2010).
35. [37] M. O. Dawood, S. S. Chiad, A. J. Ghazai3, N. F. Habubi and O. M. Abdulmunem. AIP Conference Proceedings 2213, 020102 (2020) https://doi.org/10.1063/5.000013610.1063/5.0000136 ↗
36. [38] E. S. Hassan, A. K. Elttayef, S. H. Mostafa, M. H. Salim and S. S. Chiad. Journal of Materials Science: Materials in Electronics 30 (17),15943-15951 (2019). https://doi.org/10.1155/2014/68431710.1155/2014/684317 ↗
37. [39] E. S. Hassan, T. H. Mubarak, S. S. Chiad, N. F. Habubi, A. A. Khadayeir, M. O. Dawood and I. A. Al-Baidhany Journal of Physics: Conference Series, 1294 022008 (2019) https://doi: 10.1088/1742-6596/1294/2/02200810.1088/1742-6596/1294/2/022008 ↗
38. [40] J. Tauc, Optical Properties of Amorphous Semiconductors, Plenum, New York, 1973; https://doi.org/10.1007/978-1-4615-8705-7_410.1007/978-1-4615-8705-7_4 ↗
39. [41] P. Prabukanthan and R. Dhanasekaran, Cryst. Growth Des. 7, 618-623 (2007); https://doi.org/10.1021/cg060450o10.1021/cg060450o ↗
40. [42] B.J. Lokhande, P.S. Patil, M.D. Uplane, Phys. B 302/303, 59-63(2001); https://doi.org/10.1016/S0921-4526(01)00405-710.1016/S0921-4526(01)00405-7 ↗
41. [43] D. R. Penn, Phys. Rev. 128, 2093 (1962); https://doi.org/10.1103/PhysRev.128.209310.1103/PhysRev.128.2093 ↗