Enhancing thermoelectric performance of Bi2S3 bulk via AgCl incorporation and hierarchical defect engineering
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OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces
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References (44)
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1. Toward efficient thermoelectric materials and devices: advances, challenges, and opportunities10.1021/acs.chemrev.5c00060 ↗
2. Doping strategy in metavalently bonded materials for advancing thermoelectric performance10.1038/s41467-024-52645-3 ↗
3. Atomic-scale interface strengthening unlocks efficient and durable Mg-based thermoelectric devices10.1038/s41563-025-02167-0 ↗
4. Achieving ultrahigh power factor in Mg3(Sb,Bi)2-based thermoelectric alloys sintered by introducing elemental Mg and W10.3390/books978-3-7258-3921-6 ↗
5. Boosting the power factor and thermoelectric performance in eco-friendly Cu3SbS4 by twin boundary and grain boundary phase10.1016/j.cej.2023.143559 ↗
6. Bi2Te3‐based thermoelectric modules for efficient and reliable low‐grade heat recovery
7. Band flattening and strain field assists an excellent thermoelectric performance of n‐type Bi2Se3 for room to mid‐temperature application10.1002/smll.202410622 ↗
8. Pseudo-nanostructure and trapped-hole release induce high thermoelectric performance in PbTe10.1126/science.adj8175 ↗
9. Entropy engineering enabled atomically dispersed Cu doping leading to an exceptionally high thermoelectric figure of merit in n-type lead chalcogenides10.1039/D4EE00691G ↗
10. Multiscale structure and band configuration tuning to achieve high thermoelectric properties in n-type PbS bulks10.1016/j.nanoen.2020.104826 ↗
11. Enhancing thermoelectric performance of CexBi2S3 by optimizing carrier concentration combined with band engineering10.1039/C7TC04082B ↗
12. Realizing high thermoelectric properties in Bi2S3 bulk via band engineering and nanorods compositing
13. Theoretical and experimental investigations of the thermoelectric properties of Bi2S310.1063/1.4916528 ↗
14. High thermoelectric performance in n-type bismuth sulfide by carrier concentration tuning and dense nanodomains10.1016/j.jeurceramsoc.2024.02.025 ↗
15. Incorporation of MXene into Bi2S3 matrix promotes better electron transport and enhanced thermoelectric figure of merit10.1021/acsami.4c19651 ↗
16. Realizing high electrical conductivity in chlorine-doped Bi2S3 thermoelectric thin films via air plasma treatment10.1021/acsmaterialslett.3c00700 ↗
17. Thermoelectric performance of n-type magnetic element doped Bi2S310.1021/acsaem.2c00295 ↗
18. Enhanced the thermoelectric properties of n-type Bi2S3 polycrystalline by iodine doping10.1016/j.jallcom.2017.08.148 ↗
19. Tellurium-free thermoelectric: the anisotropic n-type semiconductor Bi2S310.1002/aenm.201100775 ↗
20. High thermoelectric performance in the n-type Bi2S3/f-MWCNTs nanocomposites prepared by hydrothermal method10.1016/j.carbon.2023.118158 ↗
21. High thermoelectric properties realized in earth-abundant Bi2S3 bulk via carrier modulation and multi-nano-precipitates synergy10.1016/j.nanoen.2020.105227 ↗
22. Enhanced thermoelectric performance of Bi2S3 by synergistical action of bromine substitution and copper nanoparticles10.1016/j.nanoen.2015.03.036 ↗
23. Remarkably enhanced thermoelectric properties of Bi2S3 nanocomposites via modulation doping and grain boundary engineering10.1016/j.apsusc.2020.146341 ↗
24. Improved thermoelectric properties of n-type Bi2S3 via grain boundaries and in-situ nanoprecipitates10.1016/j.jeurceramsoc.2018.11.053 ↗
25. Unconventional solvent‐doping‐induced ultrahigh carrier mobility leads to excellent thermoelectric performance in eco‐friendly Bi2S3 and SnS10.1002/aenm.202405859 ↗
26. Realizing high thermoelectric performance in earth-abundant Bi2S3 bulk materials via halogen acid modulation
27. Boosting the thermoelectric performance of n-type Bi2S3 by hierarchical structure manipulation and carrier density optimization10.1016/j.nanoen.2021.106171 ↗
28. Mass production of Pt single-atom-decorated bismuth sulfide for n-type environmentally friendly thermoelectrics10.1021/acs.nanolett.2c00947 ↗
29. Influence of defects and dopants on the photovoltaic performance of Bi2S3: First-principles insights10.1039/C6TA10377D ↗
30. Formation of Cu nanoparticles in layered Bi2Te3 and their effect on ZT enhancement10.1039/c1jm10163c ↗
31. Robust surface doping of Bi2Se3 by rubidium intercalation10.1021/nn3021822 ↗
32. Cu interstitials enable carriers and dislocations for thermoelectric enhancements in n-PbTe0.75Se0. 2510.1016/j.chempr.2020.01.002 ↗
33. Cu intercalation and Br doping to thermoelectric SnSe2 lead to ultrahigh electron mobility and temperature-independent power factor
34. Enhancement of the thermoelectric performance of polycrystalline In4Se2.5 by copper intercalation and bromine substitution10.1002/aenm.201300599 ↗
35. High thermoelectric performance in non-toxic earth-abundant copper sulfide10.1002/adma.201400515 ↗
36. Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe over a broad temperature interval10.1016/j.nanoen.2022.107576 ↗
37. Thermoelectric properties of n-type CuxBi2S3 materials fabricated by plasma activated sintering10.1016/j.jallcom.2018.11.343 ↗
38. Realizing high thermoelectric performance in eco-friendly Bi2S3 with nanopores and Cl-doping through shape-controlled nano precursors10.1016/j.nanoen.2022.107478 ↗
39. Dual‐site doping and low‐angle grain boundaries lead to high thermoelectric performance in n‐type Bi2S3
40. Melt-centrifuged (Bi,Sb)2Te3: engineering microstructure toward high thermoelectric efficiency10.1002/adma.201802016 ↗
41. Weighted mobility10.1002/adma.202001537 ↗
42. Band sharpening and band alignment enable high quality factor to enhance thermoelectric performance in n-type PbS10.1021/jacs.0c00306 ↗
43. Exceptionally low thermal conductivity realized in the chalcopyrite CuFeS2 via atomic-level lattice engineering10.1016/j.nanoen.2022.106941 ↗
44. Defect engineering for high-performance n-type PbSe thermoelectrics10.1021/jacs.8b05741 ↗