Determination of surface recombination velocity of excess carriers in amorphous silicon using the SSPG technique
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Abstract
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (21)
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1. Sze · 1981
2. Semiconductors
3. Ritter · Appl. Phys. Lett. · 1986 · 49 · 79110.1063/1.97548 ↗
4. J. Appl. Phys. · 1987 · 62 · 456310.1063/1.339051 ↗
5. Phys. Rev. B. · 1986 · 34 · 903
6. Phys. Rev. · 1988 · B38 · 8296
7. Eichler · 1986
8. Li · Phys. Rev. · 1990 · 42 · 902510.1103/PhysRevB.42.9025 ↗
9. The experimental set-up described in ref. [3]can be modified so as to measure diffusion lengths of order microns: H. Haridim and K. Weiser, to be published.
10. Kumoro · Appl. Phys. Lett. · 1983 · 42 · 7910.1063/1.93733 ↗
11. Hattori · Appl. Phys. Lett. · 1987 · 51 · 125910.1063/1.98698 ↗
12. Newell · Phys. Rev. · 1986 · B32 · 8035
13. Balberg · J. Appl. Phys. · 1990 · 632910.1063/1.345152 ↗
14. Cody · 1984
15. Weiser · 1989 · Vol. B · 871
16. Balberg · Appl. Phys. Lett. · 1987 · 53 · 194910.1063/1.100332 ↗
17. Spear · 1989 · Vol. B · 721
18. Marshall · 1989 · Vol. B · 799
19. Zelikson · Appl. Phys. Lett. · 1991 · 59 · 266010.1063/1.105931 ↗
20. Lifetime Factors in Silicon
21. Yang · 1990 · 192 · 243