DC magnetron power dependence of a-SiC:H IR absorption properties

Abstract The infrared absorption properties of a-SiC:H thin films dependence with the dc magnetron power density were investigated. The films were deposited in a mixture of CH 4 , H 2 and Ar. The target used was polycrystalline Si. We found that the dc magnetron power density has an important contribution to the film composition. There is a strong dependence of the Si–H and Si–C bonds with the dc power density.