Rare earth titano-silicates for high k gate dielectric applications
Source abstract
Abstract
Abstract The present paper explores the properties of rare earth titano-silicates compounds for high k applications. RE 2 Ti 2 SiO 9 (RE=La, Pr and Nd) ceramic compounds were prepared using conventional solid state reaction route. Its structural, dielectric, optical and thermal properties were investigated. It was found that these materials possess a high dielectric constant in the range of 20–34 at room temperature, which is greater than that of HfO 2 . The UV Visible absorption spectra indicates reasonably large band gap of above 5 eV. Further these compounds also have low coefficient of thermal expansion of less than 9 ppm/°C.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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