Deposition of ultra-thin oxide dielectrics for MOSFETs by a combination of low-temperature plasma-assisted oxidation, and intermediate and high-temperature rapid thermal processing
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OpenAlex topics: Semiconductor materials and devices · Copper Interconnects and Reliability · Electronic and Structural Properties of Oxides
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References (11)
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6. D.R. Lee and G. Lucovsky, unpublished.
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11. Lucovsky · J. Vac. Sci. Technol. · 1994 · B12 · 283910.1116/1.587202 ↗