Preparation and luminescent properties of Eu-doped Ln2O3 (Ln = Gd, Lu) thin film by citrate sol–gel process
Source abstract
Abstract
Abstract Ln2O3:Eu (Ln=Gd, Lu) luminescent thin films were deposited on sapphire and Si substrates using citrate sol–gel technique. The prepared films in different process conditions were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) measurement. The influence of viscosity, heating rate and annealing atmosphere on the morphology of Ln2O3:Eu films were discussed in detail. It is indicated that crack-free films could be prepared after sintering at temperatures ranging from 500–1100 °C with heating rate of 2.5 °C/min. The photoluminescence properties of the films were highly dependent on the annealing atmosphere, and the highest emission intensity was obtained for the sample by annealing in water vapor/oxygen atmosphere.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Microwave Dielectric Ceramics Synthesis · Luminescence Properties of Advanced Materials · Ferroelectric and Piezoelectric Materials
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References (12)
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1. Rare earth activated nanosized oxide phosphors: synthesis and optical properties10.1016/S0022-2313(99)00471-8 ↗
2. Eu3+- and TM3+-doped yttrium oxide thin films for optical applications10.1016/S0022-2313(99)00561-X ↗
3. Physical properties of Y2O3:Eu luminescent films grown by MOCVD and laser ablation10.1016/S0169-4332(96)00829-X ↗
4. Reactive electron beam evaporation of gadolinium oxide optical thin films for ultraviolet and deep ultraviolet laser wavelengths10.1016/S0040-6090(03)00678-3 ↗
5. Characterization of thin solid films of rare earth oxides formed by the metallo-organic chemical vapour deposition technique, for high temperature corrosion applications10.1016/S0040-6090(94)06487-3 ↗
6. Anomalous temperature dependence of photoluminescence from stoichiometric GD2O3−X film10.1016/j.jcrysgro.2003.08.014 ↗
7. Optical properties of europium-doped Gd2O3 waveguiding thin films prepared by the sol–gel method10.1016/S0925-3467(01)00214-2 ↗
8. Elaboration and characterization of Gd2O3 waveguiding thin films prepared by the sol–gel process10.1016/S0925-3467(00)00057-4 ↗
9. M.P. Pechini, US Patent, 3 330 697, July 1967.
10. Preparation of 9/65/35 PLZT thin films deposited by a dip-coating process10.1016/S0955-2219(00)00341-1 ↗
11. Synthesis of La0.8Sr0.2Co0.5Ni0.5O3−δ thin films for high sensitivity CO sensing material using the Pechini process10.1016/S0925-8388(01)01688-7 ↗
12. On the reasons for low luminescence efficiency in combustion-made Lu2O3:Tb10.1016/S0925-3467(01)00009-X ↗