Dependence of the equilibration temperature on hydrogen content in doped amorphous silicon

journal article·1996-05

Stanislaw M. Pietruszko, Jacek Olszewski, A.V. Zherzdev

Bibliographic record

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

OpenAlex topics: Thin-Film Transistor Technologies · Glass properties and applications · High-pressure geophysics and materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Show source-provided references

1. Street · Phys. Rev. · 1987 · B35 · 131610.1103/PhysRevB.35.1316 ↗

2. S.M. Pietruszko, M. Pachocki and J. Jang, these Proceedings, p. 73.

3. Branz · Phys. Rev. · 1993 · B48 · 7114

4. Street · Phys. Rev. · 1986 · B34 · 303010.1103/PhysRevB.34.3030 ↗

5. Meaudre · Appl. Phys. Lett. · 1993 · 62 · 59410.1063/1.108866 ↗

6. Branz · Phys. Rev. · 1987 · B36 · 793410.1103/PhysRevB.36.7934 ↗

7. Pietruszko · J. Non-Cryst. Solids · 1993 · 164–166 · 25510.1016/0022-3093(93)90539-A ↗

8. Ast · 1979 · 1159

9. Agarwal · 1993 · 592

10. Branz · 1992 · 389

11. Matsuo · Jpn. J. Appl. Phys. · 1988 · 27 · L13210.1143/JJAP.27.L132 ↗

12. Chang · Phys. Rev. · 1989 · B40 · 1164410.1103/PhysRevB.40.11644 ↗

13. Jackson · Phys. Rev. · 1990 · B41 · 1232310.1103/PhysRevB.41.12323 ↗