journal article·1985-12

On the influence of an external D.C. substrate bias on boron and phosphorus doping efficiencies in a-Si:H

F. Alvarez, I. Chambouleyron, A. Gobbi, C. Mendonça, F.L. Castro

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Semiconductor materials and interfaces

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References (3)

Show source-provided references
1. Dalal · J. de Phys. · 1981 · 42 · C4
2. Den Böer · J. de Phys. · 1981 · 42 · 451
3. Könenkamp · Appl. Phys. Lett. · 1985 · 46 · 40510.1063/1.95594 ↗