Influence of substrate temperature on the energy storage properties of bismuth magnesian niobium thin films prepared by magnetron sputtering
Source abstract
Abstract
Abstract Bismuth magnesian niobium (Bi2Mg2/3Nb4/3O7, BMNO) thin films are deposited on Pt/Ti/SiO2/Si substrates at different substrate temperatures by magnetron sputtering. The effect of substrate temperature on the energy storage properties of BMNO thin films is investigated systematically. The X-ray diffraction pattern reveals the thin films are polycrystalline with cubic pyrochlore structure. The dielectric constant of BMNO thin films increases with the substrate temperature, reaches the maximum value of 161 at 700 °C and starts decreasing thereafter. The maximum electrical breakdown strength and recoverable stored energy density are respectively obtained as 3.78 MV/cm and 58.9 J/cm3 when the BMNO thin films are deposited at 700 °C. In addition, the BMNO thin films possess excellent thermal stability of stored energy properties in a wide range of temperatures (-150 °C–200 °C). These results suggest that the BMNO thin films are a promising candidate for lead-free energy storage application in equipment operation under adverse environments.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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