Tailored electrical properties in ternary BiScO3-PbTiO3 ceramics by composition modification

Abstract Ternary 0.99(0.36BiScO 3 -0.64PbTiO 3 )-0.01Bi(M 1 M 2 ) 0.5 O 3 (BS-PT-BM 1 M 2 ) ceramics were prepared by the solid-state reaction method, where M 1 and M 2 respectively stand for bivalent and quadrivalent elements (M 1 =Sn, Pb, Ni, Sr, Ba, Ca, Cu, Mg and Mn, M 2 = Hf, Sn, Zr, Si, Ce and Mn). Effects of different elements on their structure and electrical properties were studied in detail. It was found that the formation of MPB by optimizing the doped elements can enhance electrical properties ( d 33 = 500 pC/N, ɛ r = 2013, tan δ = 0.024 at 100 kHz). Interestingly, different electrical properties can be induced by choosing the doped elements. For example, a high d 33 can be realized by doping M 1 = Sn, Pb or Sr (M 2 = Ti) as well as M 2 = Hf, Sn or Zr (M 1 = Zn), and the dielectric loss can be suppressed by doping Ce or Mn. In addition, large bipolar strain (S = 0.25–0.46%) as well as high remanent polarization ( P r = 34.7–46.4 µC/cm 2 ) can be observed for all doped elements, which were superior to pure BS-PT ( P r = 32 µC/cm 2 and S = 0.18%), and high T C ( T C = 417–443 °C) can be attained in all the ceramics. We believe that the addition of ABO 3 -type compounds with optimum elements can enhance electrical properties of BS-PT ceramics.