Analysis of various electron blocking layers to improve efficiency in green light-emitting diodes
Source abstract
Abstract
Abstract Efficiency of GaN-based green light-emitting diodes with various electron blocking layers has been studied numerically. By employing conventional AlGaN, graded AlGaN, quaternary AlGaInN and ternary AlInN electron blocking layers, performance of each device has been evaluated. The device characteristics presented include carrier transport, radiative recombination rate, electrostatic field, emission spectra and efficiency.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Photocathodes and Microchannel Plates
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (29)
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