Modification and Characterization of the Surface of SOI Nanowire Sensors
Source abstract
Abstract
In the present study, the pursued purposes were: (i) monitoring the electrical properties of silicon-on-insulator nanowires (SOI NWs), (ii) determination of surface treatments suitable for obtaining reproducible states on the surface of SOI NWs after their long-term storage, and (iii) identification of surface treatments suitable for regenerating the NW surface after protein (bovine serum albumin molecules) detection. It is shown that, during storage, with the passage of time a negative effective charge was accumulated on the surface of n-SOI NWs up to surface density Qeff = (2-4)х1012 cm-2, while the interface states at the NW/SiO2 interface underwent relatively slow depassivation. Treatments in H2O2 with subsequent treatments in HF can be used for removing organic contaminations from the NW surface and for regenerating the initial working state of SOI NWs after protein detection.
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Research context
OpenAlex topics: Nanowire Synthesis and Applications · Silicon Nanostructures and Photoluminescence · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Russian Academy of Sciences
References (14)
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