journal article·2024-06

Toward deeper ultraviolet detection: Atomic layer deposited amorphous AlGaOx thin film detector with its tunable optical properties and opto-electronic responses

Weiming Liu, Xudan Zhu, Yifan Ding, Hongyu Tang, Peiran Xu, Tiantian Huang, Yuxiang Zheng, Xin Chen, Rongjun Zhang

Ceramics International· Volume 50· Issue 11
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Abstract

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OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Gas Sensing Nanomaterials and Sensors

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References (64)

Show source-provided references
1. A review of Ga2O3 materials, processing, and devices10.1063/1.5006941 ↗
2. Fabrication of UV-C photodetector with ultimate stability in extreme space environments (radiation, low temperature) using aerosol-deposited Ga2O310.1016/j.ceramint.2023.06.299 ↗
3. Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices
4. Review of gallium-oxide-based solar-blind ultraviolet photodetectors10.1364/PRJ.7.000381 ↗
5. Evolution of optical properties and electronic structures: band gaps and critical points in MgxZn1−xO (0 ≤ x ≤ 0.2) thin films10.1039/C8CP04942D ↗
6. Semipolar (112‾2) AlGaN-based solar-blind ultraviolet photodetectors with fast response10.1021/acsami.2c03636 ↗
7. Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy10.1143/JJAP.46.L307 ↗
8. Compositionally-tuned epitaxial cubic MgxZn1−xO on Si(100) for deep ultraviolet photodetectors10.1063/1.1576309 ↗
9. Review of Ga2O3-based optoelectronic devices
10. A high responsivity self-powered solar-blind DUV photodetector based on a nitrogen-doped graphene/β- Ga2O3 microwire p–n heterojunction10.1109/LED.2022.3172728 ↗
11. High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films10.1021/acsphotonics.7b01054 ↗
12. High‐performance harsh‐environment‐resistant GaOX solar‐blind photodetectors via defect and doping engineering
13. Recent progress of Ga2O3-based gas sensors10.1016/j.ceramint.2022.06.066 ↗
14. Scaled T-gate β - Ga2O3 MESFETs with 2.45 kV breakdown and high switching figure of merit10.1109/LED.2022.3182575 ↗
15. Ultra-wide bandgap semiconductor Ga2O3 power diodes10.1038/s41467-022-31664-y ↗
16. Bandgap tunable ZnGaO thin films grown by atomic layer deposition for high-performance ultraviolet photodetection10.1021/acsmaterialslett.3c00559 ↗
17. Band gap engineering in β- Ga2O3 for a high-performance X-ray detector10.1021/acsaelm.1c00778 ↗
18. An 8-nm-thick Sn-doped polycrystalline β- Ga2O3 MOSFET with a “normally off” operation10.1063/5.0065244 ↗
19. Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β- Ga2O3
20. Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition10.1016/j.jallcom.2021.160291 ↗
21. Atomic‐Layer‐Ti‐Doped Ga2O3 thin films with tunable optical properties and wide ultraviolet optoelectronic responses10.1002/pssr.202100411 ↗
22. Narrow-band solar-blind ultraviolet detectors based on AlSnO films with tunable band gap10.1021/acsami.2c20801 ↗
23. Band gap tuning of Ga2O3–Al2O3 ceramics10.1016/j.ceramint.2022.05.172 ↗
24. Wide bandgap engineering of (AlGa)2O3 films
25. Growth of α-(AlGa)2O3 alloy thin films on c-sapphire substrates by mist chemical vapor deposition using acetylacetonated Al and Ga solutions
26. Growth characteristics of corundum-structured α-(AlxGa1– x)2O3/Ga2O3 heterostructures on sapphire substrates10.1016/j.jcrysgro.2015.12.013 ↗
27. Epitaxial κ -(AlxGa1– x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD10.1063/1.5124231 ↗
28. Structural and electronic properties of Ga2O3-Al2O3 alloys10.1063/1.5036991 ↗
29. MOCVD growth of β-phase (AlxGa1−x)2O3 on (2‾01)β-Ga2O3 substrates10.1063/5.0025478 ↗
30. Alloyed β-(AlxGa 1− x)2O3 bulk Czochralski single β-(Al 0.1 Ga 0.9) 2 O 3 and polycrystals β-(Al 0.33 Ga 0.66) 2 O 3 , β-(Al 0.5 Ga 0.5) 2 O 3), and property trends10.1063/5.0073502 ↗
31. Band gap and band offset of Ga2O3 and (AlxGa1– x)2O3 alloys10.1103/PhysRevApplied.10.011003 ↗
32. Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β-(AlxGa1– x)2O3 (x≤ 0.21) films10.1063/1.5097780 ↗
33. Dielectric function in the spectral range (0.5–8.5)eV of an (AlxGa1– x)2O3 thin film with continuous composition spread10.1063/1.4919088 ↗
34. A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide10.1038/nmat2164 ↗
35. Ultrahigh gain solar blind avalanche photodetector using an amorphous Ga2O3 -based heterojunction10.1021/acsnano.1c06567 ↗
36. Ultra‐high performance amorphous Ga2O3 photodetector arrays for solar‐blind imaging10.1002/advs.202101106 ↗
37. Flexible solar-blind photodetectors based on β-GaO films transferred by a stamp-based printing technique10.1109/LED.2022.3207314 ↗
38. Effect of oxygen flow ratio on crystallization and structural characteristics of gallium oxide thin films10.1016/j.ceramint.2021.10.157 ↗
39. Tunable optical properties of amorphous-like Ga2O3 thin films deposited by electron-beam evaporation with varying oxygen partial pressures10.3390/nano10091760 ↗
40. MBE grown Ga2O3 and its power device applications10.1016/j.jcrysgro.2013.02.015 ↗
41. Review Article: atomic layer deposition for oxide semiconductor thin film transistors: advances in research and development10.1116/1.5047237 ↗
42. Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition10.1039/C7DT03427J ↗
43. Composition and properties control growth of high-quality GaOxN y film by one-step plasma-enhanced atomic layer deposition10.1021/acs.chemmater.9b02061 ↗
44. XPS study of sputtered alumina thin films10.1016/j.ceramint.2014.03.133 ↗
45. Gallium oxide: properties and applications - a review
46. Low deposition temperature amorphous ALD- Ga2O3 thin films and decoration with MoS2 multilayers toward flexible solar-blind photodetectors10.1021/acsami.1c11692 ↗
47. Thickness dependent optical properties of amorphous/polycrystalline Ga2O3 thin films grown by plasma-enhanced atomic layer deposition10.1016/j.tsf.2022.139655 ↗
48. Effects of dielectric screening on the excitonic and critical points properties of WS2/MoS2 heterostructures10.1039/D0NR04591H ↗
49. Fujiwara · 2007
50. Optical properties and electronic structure of amorphous germanium10.1002/pssb.19660150224 ↗
51. The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition10.1186/s11671-015-0757-y ↗
52. Influence of composition on optical and dispersion parameters of thermally evaporated non-crystalline Cd50S50−xSex thin films10.1016/j.jallcom.2015.06.231 ↗
53. Intensive linear and nonlinear optical studies of thermally evaporated amorphous thin Cu-Ge-Se-Te films10.1016/j.jnoncrysol.2022.121563 ↗
54. Linear and nonlinear optical studies of thermally evaporated chalcogenide a-Pb-Se-Ge thin films10.1016/j.physb.2021.412985 ↗
55. Deep-ultraviolet transparent conductive β- Ga2O3 thin films10.1063/1.1330559 ↗
56. Hamaguchi · 2017
57. Band alignment and electrical properties of Al2O3/β - Ga2O3 heterojunctions10.1063/1.4876920 ↗
58. Tuning the bandgaps of (AlxGa1– x)2O3 alloyed thin films for high‐performance solar‐blind ultraviolet fully covered photodetectors10.1002/adom.202300042 ↗
59. Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide
60. High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm10.1126/science.1176706 ↗
61. (AlGa)2O3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity10.1364/OME.7.001240 ↗
62. High gain broadband photoconductor based on amorphous Ga2O3 and suppression of persistent photoconductivity10.1039/C9TC05159G ↗
63. Electrical and optical properties of hydrogen plasma treated β- Ga2O3 thin films10.1088/1674-4926/43/9/092802 ↗
64. p -GaSe/n - Ga2O3 van der Waals heterostructure photodetector at solar-blind wavelengths with ultrahigh responsivity and detectivity10.1021/acsphotonics.1c00015 ↗