journal article·2023-07

Selective-area growth of β-Ga2O3 nanowire films on nano-patterned Si(111) substrate by metal-organic chemical vapor deposition

Wei Chen, Teng Jiao, Zhaoti Diao, Zhengda Li, Peiran Chen, Xinming Dang, Xin Dong, Yuantao Zhang, Baolin Zhang

Ceramics International· Volume 49· Issue 13
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (49)

Show source-provided references
1. Synthesis of polycrystalline gallium oxide solar-blind ultraviolet photodetector by Aerosol Deposition10.1016/j.jeurceramsoc.2023.01.040 ↗
2. High-k oxide field-plated vertical (001) β-Ga2O3 Schottky barrier diode with baliga's figure of merit over 1 GW/cm210.1109/LED.2021.3089945 ↗
3. Radiation damage effects in Ga2O3 materials and devices10.1039/C8TC04193H ↗
4. Review-ionizing radiation damage effects on GaN devices10.1149/2.0251602jss ↗
5. Electrical properties, deep trap and luminescence spectra in semi-insulating, Czochralski β-Ga2O3 (Mg)10.1149/2.0041907jss ↗
6. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth10.7567/JJAP.55.1202A2 ↗
7. Growth and fundamentals of bulk β-Ga2O3 single crystals10.1088/1674-4926/40/1/011801 ↗
8. Nearly stress-free substrates for GaN homoepitaxy10.1016/j.jcrysgro.2006.05.058 ↗
9. Ammonothermal growth of GaN crystals in alkaline solutions10.1016/j.jcrysgro.2005.11.048 ↗
10. Growth of bulk GaN crystal by Na flux method under various conditions10.1016/j.jcrysgro.2011.12.026 ↗
11. Fast growth of high quality GaN10.1002/pssa.200303342 ↗
12. Nano-scale mechanics of nanotubes, nanowires, and nanobelts10.1002/1527-2648(200109)3:9<657::AID-ADEM657>3.0.CO;2-0 ↗
13. III-V nanowires and nanowire optoelectronic devices10.1088/0022-3727/48/46/463001 ↗
14. β-Ga2O3 nanowires: controlled growth, characterization, and deep-ultraviolet photodetection application10.1088/1361-6463/ac66a5 ↗
15. Bulk and surface transformations of Ga2O3 nanoparticle catalysts for propane dehydrogenation induced by a H2 treatment10.1016/j.jcat.2022.02.025 ↗
16. β-Ga2O3 nanowires and thin films for metal oxide semiconductor gas sensors: sensing mechanisms and performance enhancement strategies10.1016/j.jmat.2019.08.003 ↗
17. Improvement of Schottky contacts of gallium oxide (Ga2O3) nanowires for UV applications10.3390/s22052048 ↗
18. High performance solar-blind UV detector based on β-Ga2O3/GaN nanowires heterojunction10.1016/j.jallcom.2020.157564 ↗
19. Growth of β-Ga2O3 nanowires and their photocatalytic and optical properties using Pt as a catalyst10.1016/j.jallcom.2012.05.048 ↗
20. Catalyst-modified vapor-liquid-solid (VLS) growth of single crystalline β-Gallium Oxide (Ga2O3) thin film on Si-substrate10.1016/j.spmi.2019.106316 ↗
21. High-aspect ratio β-Ga2O3 nanorods via hydrothermal synthesis10.3390/nano8080594 ↗
22. Preparation of vertically aligned GaN@Ga2O3 core-shell heterostructured nanowire arrays and their photocatalytic activity for degradation of Rhodamine B10.1016/j.spmi.2020.106556 ↗
23. Growth of GaN nanotubes and nanowires on Au–Ni catalysts10.1134/S1063785019020329 ↗
24. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties10.1063/1.5109678 ↗
25. Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD10.1016/j.jcrysgro.2017.06.001 ↗
26. Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors10.1016/j.jcrysgro.2020.125511 ↗
27. Mg acceptor doping in MOCVD (010) β-Ga2O310.1063/5.0031562 ↗
28. Mask effect in nano-selective-area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates10.1364/OME.7.000376 ↗
29. Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays10.1016/j.jcrysgro.2008.11.056 ↗
30. Diameter tuning of β-Ga2O3 nanowires using chemical vapor deposition technique10.1186/s11671-017-1915-1 ↗
31. β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity10.1016/j.jallcom.2015.11.145 ↗
32. Epitaxial growth of β-Ga2O3 thin films on Si with YSZ buffer layer10.1021/acsomega.2c04387 ↗
33. High-Mobility MOCVD β-Ga2O3 epitaxy with fast growth rate using trimethylgallium10.1021/acs.cgd.2c00290 ↗
34. Growth pressure controlled nucleation epitaxy of pure phase ε- and β-Ga2O3 films on Al2O3 via metal–organic chemical vapor deposition10.1021/acs.cgd.7b01576 ↗
35. Epitaxial growth of β-Ga2O3 by hot-wall MOCVD10.1063/5.0087571 ↗
36. Heteroepitaxy of Ga2(1-x)In2xO3 layers by MOVPE with two different oxygen sources10.1002/crat.201300410 ↗
37. Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O310.1063/5.0025970 ↗
38. Vapour pressure equations for the metallic elements: 298-2500K10.1179/cmq.1984.23.3.309 ↗
39. Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition10.1063/1.2952027 ↗
40. Single-crystal growth of aluminum nitride on 6H-SiC substrates by an open-system sublimation method10.1016/j.jcrysgro.2008.12.025 ↗
41. Effects of supersaturation on the crystal structure of gold seeded III−V nanowires10.1021/cg800270q ↗
42. Growth of CdS nanowire crystals: vapor–liquid–solid versus vapor–solid mechanisms10.1016/j.surfcoat.2013.06.058 ↗
43. Selective area growth of GaN using polycrystalline γ-alumina as a mask for discrete micro-GaN array10.1021/acs.cgd.1c01363 ↗
44. Raman tensor elements of β-Ga2O310.1038/srep35964 ↗
45. Photoluminescence and Raman mapping of β-Ga2O310.1063/5.0065618 ↗
46. Initial process of photoluminescence dynamics of self-trapped excitons in a β−Ga2O3 single crystal10.1103/PhysRevB.95.094304 ↗
47. Excitation dependent and time resolved photoluminescence of β-Ga2O3, β-(Ga0.955Al0.045)2O3 and β-(Ga0.91In0.09)2O3 epitaxial layers grown by pulsed laser deposition10.1016/j.jlumin.2022.118960 ↗
48. Influence of rapid thermal annealing temperature on the photoluminescence of Tb ions embedded in silicon nitride films10.1016/j.tsf.2019.02.018 ↗
49. Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: a size effect study10.1063/1.4993741 ↗