The impact of post-deposition annealing durations on the formation of Tb4O7 passivation layer on silicon substrate
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OpenAlex topics: Semiconductor materials and devices · Ga2O3 and related materials · Ferroelectric and Piezoelectric Materials
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References (73)
Show source-provided references
1. Electronic surface and dielectric interface states on GaN and AlGaN
2. Understanding mechanical behavior and reliability of organic electronic materials10.1557/mrs.2017.3 ↗
3. High-efficiency silicon heterojunction solar cells: materials, devices and applications10.1016/j.mser.2020.100579 ↗
4. Advancing photoreforming of organics: highlights on photocatalyst and system designs for selective oxidation reactions10.1039/D0EE03116J ↗
5. High-performance, highly bendable MoS2 transistors with high-K dielectrics for flexible low-power systems10.1021/nn401429w ↗
6. Solution-processed high-k dielectric, ZrO2, and integration in thin-film transistors10.1007/s11664-012-1905-0 ↗
7. Advanced strategies of passivating perovskite defects for high-performance solar cells10.1002/eem2.12111 ↗
8. Breakdown enhancement and current collapse suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as gate dielectric layer and passivation layer10.1109/LED.2019.2945175 ↗
9. New strategies for defect passivation in high-efficiency perovskite solar cells10.1002/aenm.201903090 ↗
10. Advanced CMOS gate stack: present research progress10.5402/2012/689023 ↗
11. Application of SiO2 passivation technique in mass production of silicon solar cells10.1016/j.solmat.2019.01.038 ↗
12. Green electroluminescence from Tb4O7 films on silicon: impact excitation of Tb3+ ions by hot carriers10.1063/1.4941430 ↗
13. GLAD fabricated self-powered photodetector based on WO3 with SiO2 as interfacial layer10.1155/2023/6659621 ↗
14. Exploring non-stoichiometric SiOx thin film for non-volatile memory application10.1016/j.jallcom.2024.173420 ↗
15. Nanostructural characterization and lattice strain of TiO2-Al2O3-SiO2 coating on glass and Si (100) substrates10.4067/S0717-97072016000200005 ↗
16. A review: the development of SiO2/C anode materials for lithium-ion batteries10.1007/s11664-021-09187-x ↗
17. Visible light-driven catalysts for water oxidation: towards solar fuel biorefineries10.1016/B978-0-444-64127-4.00004-5 ↗
18. E-beam evaporated hydrophobic metal oxide thin films as carrier transport materials for large scale perovskite solar cells10.1080/10667857.2020.1830551 ↗
19. Controllable fabrication of nanostructured materials for photoelectrochemical water splitting via atomic layer deposition10.1039/C3CS60370A ↗
20. High-performance silicon photoanodes passivated with ultrathin nickel films for water oxidation10.1126/science.1241327 ↗
21. Photoelectrochemical and impedance spectroscopic investigation of water oxidation with ‘co-Pi’-coated hematite electrodes10.1021/ja306427f ↗
22. Water splitting by tungsten oxide prepared by atomic layer deposition and decorated with an oxygen-evolving catalyst10.1002/anie.201004801 ↗
23. Effect of RF sputtering power and deposition timeon optical and electrical properties of indium tin oxide thin film10.1155/2021/5556305 ↗
24. Effects of deposition temperatures and substrates on microstructure and optical properties of sputtered CCTO thin film10.1016/j.matlet.2017.08.121 ↗
25. Multilayer film passivation for enhanced reliability of power semiconductor devices10.1116/1.5121880 ↗
26. Final capping passivation layers for long-life microsensors in real fluids10.1016/j.snb.2012.12.088 ↗
27. Effects of post-deposition annealing of cerium oxide passivation layer in nitrogen-oxygen-nitrogen ambient10.1002/er.8184 ↗
28. Effects of post-deposition annealing temperature in nitrogen/oxygen/nitrogen ambient on polycrystalline gallium oxide films
29. Reducing detrimental defects for high-performance metal halide perovskite solar cells10.1002/anie.201905521 ↗
30. Selective extraction and recovery of rare earth metals from waste fluorescent powder using alkaline roasting-leaching process10.1016/S1002-0721(17)61006-8 ↗
31. Effect of thermal treatment on the formation,textural and electrical conductivity properties of nanocrystalline Tb4O710.1166/jnn.2015.9605 ↗
32. Structural features and magnetic behavior of nanocrystalline powders of terbium oxide prepared by the thermal decomposition of terbium acetate in air10.1016/j.jallcom.2015.09.274 ↗
33. Highly active and durable Pd nanocatalyst promoted by an oxygen-deficient terbium oxide (Tb4O7-x) support for hydrogenation and cross-coupling reactions10.1039/C9NJ01966A ↗
34. A general solution to mitigate water poisoning of oxide chemiresistors: bilayer sensors with Tb4O7 overlayer
35. MOCVD synthesis of terbium oxide films and their optical properties10.1002/cvde.201507153 ↗
36. Synthesis of (Bi2O3)0.9-x(Tb4O7)0.1 (Sm2O3)x electrolyte for IT-SOFCs10.1080/15533174.2016.1157822 ↗
37. Analysis of Sr2Mg (BO3)2 Tb3+ green emitting phosphor for solid state lighting: implication for light emitting diode (LED)10.24042/ijecs.v1i1.9334 ↗
38. Preparation and characterization of high-k praseodymium and lanthanoid oxide thin films prepared by pulsed laser deposition10.1143/JJAP.42.247 ↗
39. Thermal genesis, characterization, and electrical conductivity measurements of terbium oxide catalyst obtained from terbium acetate10.1016/j.tca.2009.03.006 ↗
40. Nano-preparation promoting effectively luminescent properties of one-dimensional rare earth oxides10.1016/S1002-0721(12)60186-0 ↗
41. Unusually large structural stability of terbium oxide phase under high pressure10.1016/j.jallcom.2009.10.068 ↗
42. Oxidation of a Tb2O3(111) thin film on Pt(111) by gas-phase oxygen atoms10.1021/jp505310y ↗
43. Terbium oxide films grown by chemical vapor deposition from terbium (III) dipivaloylmethanate10.1134/S0020168514040037 ↗
44. Redox-mediated transformation of a Tb2O3(111) thin film from the cubic fluorite to bixbyite structure10.1039/C9CP05083C ↗
45. Effect of thickness and post deposition annealing temperature on the structural and optical properties of thermally evaporated molybdenum oxide films10.1016/j.mssp.2018.12.038 ↗
46. Passivation and process engineering approaches of halide perovskite films for high efficiency and stability perovskite solar cells10.1039/D1EE00062D ↗
47. The impact of annealing temperature and dopant concentration on the crystal structure and conductivity of single doped (Bi2O3)1 – x (Tb4O7)x solid electrolyte systems10.1016/j.physb.2023.415487 ↗
48. Effect of Tb4O7 excess on the microstructure and magneto-optical properties of TAG transparent ceramic10.1016/j.optmat.2019.05.036 ↗
49. Study of crystallographic, thermal and electrical properties of (Bi2O3)1-x-y (Tb4O7)x (Gd2O3)y electrolyte for SOFC application10.1016/j.ceramint.2018.07.109 ↗
50. Transformation of amorphous terbium metal–organic framework on terbium oxide TbOx(111) thin film on Pt(111) substrate: structure of TbxOy film10.3390/nano12162817 ↗
51. Substrate temperature dependent opto-electronic properties of perfume atomized CdO thin films10.1080/24701556.2017.1357600 ↗
52. Three-dimensionally ordered macroporous Pr6O11 and Tb4O7 with mesoporous walls: preparation, characterization, and catalytic activity for CO oxidation10.1016/j.cattod.2014.09.017 ↗
53. Al doped ZnO thin films obtained by spray pyrolysis technique: influence of different annealing time10.1016/j.optmat.2021.110908 ↗
54. Geometrically necessary dislocation analysis of deformation mechanism for magnesium under fatigue loading at 0 °C10.3390/cryst13030490 ↗
55. Effect of annealing time on structure, morphology, and optical properties of nanostructured CdO thin films prepared by CBD technique10.3390/cryst12091315 ↗
56. Transformation of amorphous terbium metal–organic framework on terbium oxide TbOx(111) thin film on Pt(111) substrate: structure of TbxOy film10.3390/nano12162817 ↗
57. Flux growth at 1230 °c of cubic Tb2O3 single crystals and characterization of their optical and magnetic properties10.1039/C4CE02006E ↗
58. Effect of kaolinite edge surfaces on formation of Tb3+-doped phosphor by solid-state reaction10.1039/D2RA02199D ↗
59. Formation of cerium oxide fi lm via post-sputter oxidation of cerium in nitrogen/oxygen/nitrogen ambient
60. Enhanced sensitivity of low-cost fabricated fluorine doped ZnO metal semiconductor metal photodetector10.1016/j.optmat.2021.111771 ↗
61. Comparative study of UV-ZnO NRs photodetectors based on seeded porous silicon by RF-sputtering and drop-casting methods10.1007/s10854-022-09315-1 ↗
62. X-ray diffraction microstrain analysis for extraction of threading dislocation density of GaN films grown on silicon, sapphire, and SiC substrates
63. Texture and magnetic anisotropy of YBa2Cu3O7-x film on MgO substrate10.1007/s10854-020-04623-w ↗
64. Influence of oxygen on structural and optoelectronic properties of CdS thin film deposited by magnetron sputtering technique10.1016/j.cjph.2020.06.010 ↗
65. Optical, structural, and crystal defects characterizations of dip synthesized (Fe-Ni) Co-doped ZnO thin films10.3390/ma13071737 ↗
66. Crystallite size induced bandgap tuning in WO3 derived from nanocrystalline tungsten10.1016/j.scriptamat.2019.09.032 ↗
67. Reliability and interpretation of the microstructural parameters determined by X-ray line profile analysis for nanostructured materials10.1140/epjs/s11734-022-00572-z ↗
68. Sensitivity estimation of indium oxide thin film for gamma sensing10.1007/s10853-023-08720-z ↗
69. Nitrogen and oxygen annealing effects on properties of aluminum-gallium oxide films grown by pulsed laser deposition10.1016/j.ceramint.2020.06.194 ↗
70. Effects of annealing time on the electrical properties of the Y2O3 gate on silicon10.1080/17458080.2013.781689 ↗
71. Effect of annealing time on structural and optical proprieties of TiO2 thin films elaborated by spray pyrolysis technique for future gas sensor application
72. Bulk transport and oxygen surface exchange of the mixed ionic-electronic conductor Ce1-xTbxO2-δ (x = 0.1, 0.2, 0.5)10.1039/c3ta11610g ↗
73. A Precisely loading Pt on Tb4O7/CN heterojunction for efficient photocatalytic overall water splitting: design and mechanism10.1016/j.apcatb.2023.123393 ↗