Structural, optical and electrical properties of epitaxial rutile SnO2 films grown on MgF2 (110) substrates by MOCVD
Source abstract
Abstract
Abstract Epitaxial SnO 2 films were deposited on MgF 2 (110) substrates at different substrate temperatures by the metal organic chemical vapor deposition (MOCVD) method. The structural, optical and electrical properties as well as elementary composition were studied in detail. The obtained films were all rutile phase SnO 2 grown along the [110] direction. The SnO 2 film prepared at 660 °C was single crystalline epitaxial film. The epitaxial relationships were clearly determined as SnO 2 (110) || MgF 2 (110) with SnO 2 [001] || MgF 2 [001]. The Hall mobility of the 660 °C-deposited film was 21 cm 2 V −1 s −1 with a carrier concentration of 3.9 × 10 17 cm −3 . The average transmittance of the 660 °C-deposited film in the visible range is 93% and the optical band gap is estimated as 3.89 eV.
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Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Transition Metal Oxide Nanomaterials
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References (32)
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1. Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor10.1126/science.1083212 ↗
2. A tin oxide field-effect transistor10.1016/0038-1101(64)90057-7 ↗
3. Nano particulate SnO2 based resistive films as a hydrogen and acetone vapour sensor10.1016/j.snb.2010.11.003 ↗
4. Highly transparent tin oxide films prepared by DC magnetron sputtering and its liquid crystal display application10.1143/JJAP.41.237 ↗
5. Reversible and high-capacity SnO2/carbon cloth composite electrode materials prepared by magnetron sputtering for Li-ion batteries10.1016/j.matlet.2016.12.071 ↗
6. Enhanced efficiency and stability of inverted perovskite solar cells using highly crystalline SnO2 nanocrystals as the robust electron‐transporting layer10.1002/adma.201600619 ↗
7. Fully transparent thin-film transistor devices based on SnO2 nanowires10.1021/nl0712217 ↗
8. Solution-processed Nb:SnO2 electron transport layer for efficient planar perovskite solar cells10.1021/acsami.6b13362 ↗
9. Effect of annealing temperature on the performance of SnO2 thin film transistors prepared by spray pyrolysis10.1166/jnn.2015.10198 ↗
10. Fabrication and characterization of thin-film transistors with SnO2 channel by spray pyrolysis10.7567/JJAP.53.066506 ↗
11. Remarkably high mobility ultrathin-film metal-oxide transistor with strongly overlapped orbitals10.1038/srep19023 ↗
12. Epitaxial SnO2 thin films grown on (1̄012) sapphire by femtosecond pulsed laser deposition10.1063/1.1426245 ↗
13. Heteroepitaxial growth of SnO2 thin films on SrTiO3 (111) single crystal substrate by laser molecular beam epitaxy10.1063/1.3273494 ↗
14. Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD10.1016/j.jcrysgro.2011.03.004 ↗
15. Structural and photoluminescence properties of single crystalline SnO2:In films deposited on α-Al2O3 (0 0 0 1) by MOCVD10.1016/j.jcrysgro.2008.05.033 ↗
16. Amorphous ultrathin SnO2 films by atomic layer deposition on graphene network as highly stable anodes for lithium-ion batteries10.1021/acsami.5b08719 ↗
17. Plasma-assisted molecular beam epitaxy of SnO2 on TiO210.1016/j.jcrysgro.2008.06.062 ↗
18. Twin structures of epitaxial SnO2 films grown on a-cut sapphire by metalorganic chemical vapor deposition10.1116/1.3683042 ↗
19. Heteroepitaxy of SnO2 thin films on m-plane sapphire by MOCVD10.1016/j.jcrysgro.2011.04.024 ↗
20. Epitaxial rutile TiO2 film based on MgF2 substrate for ultraviolet detector10.1016/j.jallcom.2016.05.126 ↗
21. Optical and electrical switching properties of VO2 thin film on MgF2 (111) substrate10.1016/j.ceramint.2016.01.178 ↗
22. The epitaxial growth and interfacial strain study of VO2/MgF2 (001) films by synchrotron based grazing incidence X-ray diffraction10.1016/j.jallcom.2016.03.277 ↗
23. Synthesis and properties of epitaxial SnO2 films deposited on MgO (100) by MOCVD10.1016/j.vacuum.2011.12.009 ↗
24. A novel method for preparing ordered SnO2/TiO2 alternate nanoparticulate films10.1006/jcis.2001.7880 ↗
25. Characterization of tin oxides by x-ray-photoemission spectroscopy10.1103/PhysRevB.46.2460 ↗
26. X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films10.1016/S0169-4332(99)00601-7 ↗
27. Properties of SnO2 films fabricated using a rectangular filtered vacuum arc plasma source10.1016/j.tsf.2008.02.020 ↗
28. The influence of oxygen flow rate on properties of SnO2 thin films grown epitaxially on c-sapphire by chemical vapor deposition
29. Epitaxial growth of transparent tin oxide films on (0001) sapphire by pulsed laser deposition10.1016/j.materresbull.2008.09.010 ↗
30. Structural and electrical properties of SnO2 films grown on r-cut sapphire at different substrate temperature by MOCVD10.1016/j.vacuum.2013.05.011 ↗
31. Electron transport properties of antimony doped SnO2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy10.1063/1.3254241 ↗
32. Intrinsic n-type behavior in transparent conducting oxides: A comparative hybrid-functional study of In2O3, SnO2, and ZnO10.1103/PhysRevLett.103.245501 ↗