Homogeneous ZnO nanostructure arrays on GaAs substrates by two-step chemical bath synthesis
Source abstract
Abstract
ZnO nanostructures, including nanowires, nanorods, and nanoneedles, have been deposited on GaAs substrates by the two-step chemical bath synthesis. It was demonstrated that the O2-plasma treatment of GaAs substrates prior to the sol–gel deposition of seed layers was essential to conformally grow the nanostructures instead of 2D ZnO bunches and grains on the seed layers. Via adjusting the growth time and concentration of precursors, nanostructures with different average diameter (26–225 nm), length (0.98–2.29 μm), and density (1.9–15.3 × 109 cm−2) can be obtained. To the best of our knowledge, this is the first demonstration of ZnO nanostructure arrays grown on GaAs substrates by the two-step chemical bath synthesis. As an anti-reflection layer on GaAs-based solar cells, the array of ZnO nanoneedles with an average diameter of 125 nm, a moderate length of 2.29 μm, and the distribution density of 9.8 × 109 cm−2 has increased the power conversion efficiency from 7.3 to 12.2 %, corresponding to a 67 % improvement.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Quantum Dots Synthesis And Properties · Perovskite Materials and Applications
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References (15)
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1. Chen LY, Wu SH, Yin YT (2009) Catalyst-free growth of vertical alignment ZnO nanowire arrays by a two-stage process. J Phys Chem C 113:21572–2157610.1021/jp908114p ↗
2. Cheng CY, Hong FCN, Huang CY (2010) Micro-and nanopatterned polymethylmethacrylate layers on plastic poly (ethylene terephthalate) substrates by modified roller-reversal imprint process. J Vac Sci Technol B 28:921–92510.1116/1.3474984 ↗
3. Greene LE, Law M, Goldberger J, Kim F, Johnson JC, Zhang Y, Saykally RJ, Yang P (2003) Low-temperature wafer-scale production of ZnO nanowire arrays. Angew Chem Int Ed 42:3031–303410.1002/anie.200351461 ↗
4. Hoffman RL, Norris BJ, Wager JF (2003) ZnO-based transparent thin-film transistors. Appl Phys Lett 82:733–73510.1063/1.1542677 ↗
5. Huang JS, Lin CF (2008) Influences of ZnO sol–gel thin film characteristics on ZnO nanowire arrays prepared at low temperature using all solution-based processing. J Appl Phys 103:014304 1–014304 5
6. Lee YJ, Ruby DS, Peters DW, McKenzie BB, Hsu JWP (2008) ZnO nanostructures as efficient antireflection layers in solar cells. Nano Lett 8:1501–150510.1021/nl080659j ↗
7. Qiu J, Li X, He W, Park SJ, Kim HK, Hwang YH, Lee JH, Kim YD (2009) The growth mechanism and optical properties of ultralong ZnO nanorod arrays with a high aspect ratio by a preheating hydrothermal method. Nanotechnology 20:155603 1–155603 910.1088/0957-4484/20/15/155603 ↗
8. Schrier J, Demchenko DO, Wang LW (2007) Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures for photovoltaic applications. Nano Lett 7:2377–238210.1021/nl071027k ↗
9. Su YK, Peng SM, Ji LW, Wu CZ, Cheng WB, Liu CH (2009) Ultraviolet ZnO nanorod photosensors. Langmuir 26:603–606
10. Su BY, Su YK, Tseng ZL, Shih MF, Cheng CY, Wu TH, Wu CS, Yeh JJ, Ho PY, Juang YD, Chu SY (2011) Antireflective and radiation resistant ZnO thin films for the efficiency enhancement of GaAs photovoltaics. J Electrochem Soc 158:H267–H27010.1149/1.3531937 ↗
11. Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu SF, Fuke S, Segawa Y, Ohno H, Koinuma H, Kawasaki M (2005) Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nat Mater 4:42–4610.1038/nmat1284 ↗
12. Yang LL, Zhao QX, Willander M, Yang JH (2009) Effective way to control the size of well-aligned ZnO nanorod arrays with two-step chemical bath deposition. J Cryst Growth 311:1046–105010.1016/j.jcrysgro.2008.12.028 ↗
13. Yavari I, Mahjoub AR, Kowsari E, Movahedi M (2009) Synthesis of ZnO nanostructures with controlled morphology and size in ionic liquids. J Nanopart Res 11:861–86810.1007/s11051-008-9485-x ↗
14. Zhang JY, Li PJ, Sun H, Shen X, Deng TS, Zhu KT, Zhang QF, Wu JL (2008) Ultraviolet electroluminescence from controlled arsenic-doped ZnO nanowire homojunctions. Appl Phys Lett 93:021116 1–021116 310.1063/1.2958230 ↗
15. Zhang XM, Lu MY, Zhang Y, Chen LJ, Wang ZL (2009) Fabrication of a high‐brightness blue‐light‐emitting diode using a ZnO-nanowire array grown on p-GaN thin film. Adv Mater 21:2767–277010.1002/adma.200802686 ↗