Porosity-controlled multilayer TaC coatings prepared via wet powder process for multi-functional reactor components in GaN crystal growth system
Source abstract
Abstract
Abstract Multilayer TaC coatings with layers of different porosities, that provide corrosion resistance and controlled wettability against molten metal are prepared via a wet powder process and a subsequent sintering process. A porous TaC top layer with a dense TaC underlayer formed on a graphite substrate is applied as a reactor component. It is found that this layer significantly increases the surface area of a molten Ga source via capillary action due to its high open porosity. It is also demonstrated that this layer enhances the Ga vapor supply rate, and thus the growth rate, during halogen-free vapor-phase epitaxial growth of GaN crystals.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
Show source-provided references
1. Ultrawide-bandgap semiconductors: research opportunities and challenges10.1002/aelm.201600501 ↗
2. GaN-based trench gate metal oxide semiconductor field-effect transistor fabricated with novel wet etching10.1143/APEX.1.021104 ↗
3. Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV10.7567/APEX.7.021002 ↗
4. A vertical insulated gate AlGaN/GaN heterojunction field-effect transistor10.1143/JJAP.46.L503 ↗
5. 1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material10.7567/JJAP.56.026501 ↗
6. Gallium nitride devices for power electronic application10.1088/0268-1242/28/7/074011 ↗
7. Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode10.1143/JJAP.45.9001 ↗
8. Kimoto · 2014
9. T. Kimoto, H. Niwa, N. Kaji, T. Kobayashi, Y. Zhao, S. Mori, M. Aketa, Progress and future challenges of SiC power devices and process technology, 2017 IEEE International Electron Devices Meeting (IEDM), 2017, pp. 9.5.1–9.5.4.10.1109/IEDM.2017.8268360 ↗
10. Technological breakthroughs in growth control of silicon carbide for high power electronic devices
11. 150 A SiC V-groove trench gate MOSFET with 6 × 6 mm2 chip size on a 150 mm C-face in-house epitaxial wafer10.7567/JJAP.55.04ER05 ↗
12. Development of a novel 1200-V-class 4H-SiC implantation-and-epitaxial trench MOSFET with low on-resistance10.7567/JJAP.55.04ER06 ↗
13. Ultrahigh-quality silicon carbide single crystals10.1038/nature02810 ↗
14. Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices10.1039/C6CE00622A ↗
15. Growth of AlN single crystalline boules10.1016/j.jcrysgro.2010.04.005 ↗
16. Seeded growth of AlN on N- and Al-polar AlN seeds by physical vapor transport10.1016/j.jcrysgro.2005.10.074 ↗
17. Growth of bulk GaN crystal by Na flux method under various conditions10.1016/j.jcrysgro.2011.12.026 ↗
18. Gas tight sintered material for high temperature sublimation setups10.1016/j.jeurceramsoc.2010.12.013 ↗
19. Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation10.7567/APEX.7.015502 ↗
20. Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation10.1016/S0022-0248(98)01212-3 ↗
21. Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers10.1007/s11664-000-0082-8 ↗
22. Samsonov · 1980
23. High rate hot-wire chemical vapor deposition of silicon thin films using a stable TaC covered graphite filament10.1016/j.tsf.2011.01.322 ↗
24. TaC-coated Graphite EVEREDKOTE™-B. 〈http://www.toyotanso.com/Products/new_developed_products/everedkoteb.html〉 (Accessed 30 May 2018).
25. Carbide Coatings. 〈https://www.momentive.com/en-US/categories/ceramics/carbide-coatings/〉 (Accessed 30 May 2018).
26. Sintered tantalum carbide coatings on graphite substrates: highly reliable protective coatings for bulk and epitaxial growth10.1063/1.4913413 ↗
27. Simple and quick enhancement of SiC bulk crystal growth using a newly developed crucible material10.7567/APEX.9.055507 ↗
28. Tantalum carbide coating via wet powder process: from slurry design to practical process tests10.1016/j.jeurceramsoc.2016.10.029 ↗
29. TaC-coated graphite prepared via a wet ceramic process: application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors10.1016/j.jcrysgro.2017.09.003 ↗
30. Significant increase in GaN growth rate by halogen-free vapor phase epitaxy with porosity-controlled evaporator10.7567/APEX.10.095503 ↗
31. Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals10.7567/APEX.10.045504 ↗
32. Nanopipe formation as a result of boron impurity segregation in gallium nitride grown by halogen-free vapor phase epitaxy10.1063/1.4972472 ↗
33. Ultrahigh-yield growth of GaN via halogen-free vapor-phase epitaxy10.7567/APEX.11.065502 ↗
34. Macro-defect-free homoepitaxial GaN growth through halogen-free vapor-phase epitaxy on native GaN seeds10.1016/j.jcrysgro.2018.05.002 ↗
35. Rahaman · 2003
36. Anderson · 1997
37. Fabrication of large-sized TaC-coated carbon crucibles for the low-cost sublimation growth of large-diameter bulk SiC crystals10.7567/JJAP.56.085504 ↗
38. X-ray line broadening from filed aluminium and wolfram10.1016/0001-6160(53)90006-6 ↗