Oxygen vacancies in nanostructured hetero-interfacial oxides: a review
Source abstract
Abstract
Oxygen vacancies have paved new directions in the applications of materials and particularly, metal oxides. The interface that exists when two or more of these materials are brought together is exceptional, as properties such as superconductivity, magnetoresistance, tunable ionic conductivity and perpendicular exchange bias can occur as a result of the creation of these vacancies. We have reviewed here research that has focussed on this aspect, i.e. on the synthesis, study, control and analysis of oxygen vacancies created at the interfaces of nanostructured materials of various morphologies in the nanometre scale. A comprehensive insight into the possible architectures of hetero-interfaces and the enhanced and emergent properties arising therein have been discussed. Control of specific parameters during fabrication and their effect on the location, concentration and diffusion of oxygen vacancies have been presented. Perceptions on the potentialities of vacancies that can be realized on addressing challenges remaining in vacancy manipulation have also been discussed. Graphical abstract
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
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