Microwave dielectric properties of scheelite structured low temperature fired Bi(In1/3Mo2/3)O4 ceramic
Source abstract
Abstract
Abstract A Bi(In1/3Mo2/3)O4 ceramic was prepared via the solid state reaction method. The pure monoclinic phase was formed at around 650 °C. Ceramic samples with relative densities above 97% were obtained when sintering temperature was around 840 °C. The best microwave dielectric properties were achieved in the Bi(In1/3Mo2/3)O4 ceramic sintered at 840 °C for 2 h with permittivity ∼25.2, Qf of 40,000 GHz and temperature coefficient of resonance frequency ∼−65 ppm/°C at 8.2 GHz. The temperature dependence of microwave dielectric properties was also studied in a wide temperature range from −250 °C to +120 °C. The Qf value increased with the decrease of temperature and reached a maximum of 150,000 GHz at −250 °C.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Microwave Dielectric Ceramics Synthesis · Ferroelectric and Piezoelectric Materials · Nuclear materials and radiation effects
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (20)
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