Characteristics of Ti-doped ITO films grown by DC magnetron sputtering
Source abstract
Abstract
Abstract We have investigated the effects of Ti doping on the structural, optical, and electrical properties of indium tin oxide (ITO) thin films prepared by direct-current (DC) sputtering at room temperature. It is observed that the Ti doping changes the microstructure of the ITO films from amorphous to polycrystalline improving the electrical properties. The optimized ITO:Ti thin film after annealing shows a carrier concentration of 6.24 × 1020 cm−3, a mobility of 34 cm2/V s, and a resistivity of 2.3 × 10−4 Ω cm. The ITO:Ti film also shows a better thermal stability up to 450 °C.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
Show source-provided references
1. Modeling of optical and electrical proeprties of In2O3:Sn coatings made by varous techniques10.1016/j.tsf.2005.07.277 ↗
2. Light effects on the bias stability of transparent ZnO thin film transistors10.4218/etrij.09.0208.0266 ↗
3. Behaviors of carrier concentrations and mobilities in indium-tin oxide thin films by DC magnetron sputtering at various oxygen flow rates10.1016/j.vacuum.2004.08.006 ↗
4. Effects of interfacial dielectric layers on the electrical performance of top-gate In–Ga–Zn–oxide thin-film transistors10.4218/etrij.09.1209.0049 ↗
5. Influence of pressure and annealing on the microstructural and electro-optical properties of RF magnetron sputtered ITO thin films10.1016/j.materresbull.2004.03.008 ↗
6. Band gap shift in the indium-tin-oxide films on polyethylene napthalate after thermal annealing in air10.1063/1.2357647 ↗
7. Present status of transparent conducting oxide thin-film development for indium-tin oxide (ITO) substitutes10.1016/j.tsf.2007.10.063 ↗
8. Thermal stability of indium tin oxide thin films co-sputtered with zinc oxide10.1016/j.tsf.2007.09.009 ↗
9. Opto-electronic properties of titanium-doped indium-tin-oxide films deposited by RF magnetron sputtering at room temperature10.1016/j.mseb.2006.07.027 ↗
10. Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering10.1016/j.tsf.2009.08.016 ↗
11. Band-gap widening in heavily Sn-doped In2O310.1103/PhysRevB.30.3240 ↗
12. Tanc · 1974
13. Effects of multiple heat treatment cycles on structure, optical and electrical properties of indium-tin-oxide thin films10.1016/j.surfcoat.2010.10.062 ↗