Unique interface-driven crystallization mechanism and element-resolved structure imaging of ZnO-Ge2Sb2Te5 nanocomposites
Source abstract
Abstract
Abstract Amorphous Ge 2 Sb 2 Te 5 thin films doped with ZnO were prepared and their crystallization behaviors were investigated. Our results showed that thermal annealing of amorphous ZnO-Ge 2 Sb 2 Te 5 nanocomposites produced face centered-cubic Ge 2 Sb 2 Te 5 -nanocrystals embedded between interfaces. An increase in crystallization temperature and electrical resistance ratio were attributed to the increase of specific interfacial energies and inhomogeneous strain at the oxide/Ge 2 Sb 2 Te 5 interfaces. The formation of the interfaces not only accelerated crystallization, but also limited the grain growth due to the one-dimensional growth mode. We proposed a crystallization model to elucidate the derived kinetic mechanism of the nanocrystal growth in the Ge 2 Sb 2 Te 5 matrix. These experimental observations suggest that ZnO-Ge 2 Sb 2 Te 5 nanocomposites are a good candidate for the applications in phase change memory.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Nonlinear Optical Materials Studies · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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