Preparation of (100)-oriented CeO2 film on (100) MgO single crystal substrate by laser chemical vapor deposition using solid precursor
Source abstract
Abstract
(100)-oriented CeO2 films were prepared on (100) MgO single crystal substrate by laser chemical vapor deposition. A (100)-oriented CeO2 film showed a full width at half maximum value of 1.0° of the ω-scan on the (200) reflection and that of 2.1° of the ϕ-scan on the (220) reflection, respectively. The (100)-oriented CeO2 films showed cube-on-cube epitaxial growth and had rectangular grains in surface and columnar grains in cross section. The deposition rate of the (100)-oriented CeO2 films were 16–24 μm h−1.
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Research context
OpenAlex topics: Catalytic Processes in Materials Science · Electronic and Structural Properties of Oxides · ZnO doping and properties
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References (24)
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