Characterization of Cu(In,Ga)Se2 thin films prepared via a sputtering route with a following selenization process
Source abstract
Abstract
Abstract Cu(In,Ga)Se 2 films were prepared via a sputtering route with a following selenization process. In, CuIn, and Cu 3 Ga were observed in the precursor films. Selenization at 450 o C yielded monophasic Cu(In,Ga)Se 2 films. The diffraction angles of the (112) peaks shifted toward high angles, and a uniform morphology of the obtained films was observed with high-temperature selenization. The amount of gallium ions incorporated into indium ions increased with the temperature. The probable formation mechanism of the sputtering-derived Cu(In,Ga)Se 2 was proposed. Firstly, selenium species diffuse into the precursor films to form Cu(In,Ga)Se 2 and Cu 2− x Se phases. Subsequently, the complete reaction of selenium with residual species leads to the formation reaction of single-phased Cu(In,Ga)Se 2 . An efficiency of 8.34% was achieved for the fabricated solar cell.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (21)
Show source-provided references
1. Preparation and characterization of CuInSe2 particles via the hydrothermal route for thin-film solar cells10.1016/j.jallcom.2010.08.164 ↗
2. Sol–gel assisted preparation and characterization of silver indium diselenide powders10.1016/j.jallcom.2011.06.069 ↗
3. Microemulsion-mediated solvothermal synthesis of copper indium diselenide powders10.1016/j.solmat.2010.05.005 ↗
4. F.S. Chen, C.H. Wu, C.H. Lu, Low-temperature synthesis of Cu(In,Ga)Se2 thin films using selenium-containing precursors, International Journal of Applied Ceramic Technology 9 (2012) 853–860.10.1111/j.1744-7402.2012.02777.x ↗
5. New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%10.1002/pip.1078 ↗
6. Effect of gallium grading in Cu(In,Ga)Se2 solar-cell absorbers produced by multi-stage coevaporation10.1016/j.solmat.2010.10.011 ↗
7. Improved fill factor and open circuit voltage by crystalline selenium at the Cu(In,Ga)Se2/buffer layer interface in thin film solar cells10.1002/pip.957 ↗
8. Fabrication of Cu(In,Ga)Se2 thin films by sputtering from a single quaternary chalcogenide target10.1002/pip.1001 ↗
9. 12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879mV prepared by a rapid thermal process10.1016/j.solmat.2010.11.003 ↗
10. Selenization of co-sputtered CuInAl precursor films10.1016/j.solmat.2009.12.005 ↗
11. Thin film deposition methods for CulnSe2 solar cells10.1080/10408430590918341 ↗
12. Fabrication of CuIn1−xGaxSe2 thin film solar cells by sputtering and selenization process10.1016/S0040-6090(03)00350-X ↗
13. Revised effective ionic-radii and systematic studies of interatomic distances in halides and chalcogenides10.1107/S0567739476001551 ↗
14. Growth and properties of vacuum-deposited CuInSe2 thin-films10.1116/1.568808 ↗
15. Addition of Na into CuInS2 thin film via co-evaporation10.1016/j.tsf.2010.08.086 ↗
16. CIGSS films prepared by sol–gel route10.1016/j.tsf.2008.10.104 ↗
17. M. Contreras, L. Mansfield, B. Egaas, J. Li, M. RomeroR. Noufi,Improved energy conversion efficiency in wide-bandgap Cu(In,Ga)Se2 solar cells, Presented at the 37th IEEE Photovoltaic Specialists Conference, 2011, NREL/CP-5200-50669.10.1109/PVSC.2011.6185837 ↗
18. Diode characteristics in state-of-the-art ZnO/CdS/ Cu(In1−xGax)Se2 solar cells10.1002/pip.626 ↗
19. Lattice-vibrations of CuInSe2 and CuGaSe2 by Raman microspectrometry10.1063/1.352195 ↗
20. Preparation of Cu(In,Ga)Se2 films via direct heating the selenium-containing precursors without selenization10.1016/j.ceramint.2012.03.031 ↗
21. Photovoltaic measurements10.1016/0379-6787(85)90007-9 ↗