Influence of substrate temperature on the electrical and optical properties of Ga-doped ZnO thin films fabricated by continuous composition spread

Abstract The electrical and optical properties of Ga-doped ZnO (GZO) thin films deposited at different substrate temperatures have been studied by a continuous composition spread (CCS) method. The full range of GZO compositions deposited at different substrate temperatures was explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 9.6 × 10 −4 Ω cm and an average transmittance above 89% in the 400–700 nm wavelength regions were able to be formed at a substrate temperature of 100 °C. Optimized composition of the GZO thin film which had the lowest resistivity and highest transmittance was found at 0.8 wt% Ga 2 O 3 doped ZnO.