Self-rectifying and forming-free resistive switching behaviors in Pt/La2Ti2O7/Pt structure
Source abstract
Abstract
Abstract In this work, we report the resistive switching behavior of an amorphous La2Ti2O7 (LTO) film as sandwiched between two Pt electrodes. The resistive switching is forming-free and highly uniform. Furthermore, it exhibits self-rectifying resistive switching behaviors owing to the Schottky contact and quasi-ohmic contact formed at the top and bottom interfaces, respectively. The mechanism of switching behavior in the device is attributed to the trapping/detrapping-mediated electronic bipolar resistance switching. By fitting the current-voltage characteristics, it indicates the coexistent conduction mechanisms of Schottky emission and space-charge-limited-conduction (SCLC), while the Schottky barrier modified by electron trapping/detrapping plays a dominating role in the resistive switching process.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Transition Metal Oxide Nanomaterials
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References (32)
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