Enhancement of electrical properties of (Gd, V) co-doped BiFeO3 thin films prepared by chemical solution deposition

Abstract Pure BiFeO 3 (BFO) and (Bi 0.9 Gd 0.1 )(Fe 0.975 V 0.025 )O 3+ δ (BGFVO) thin films were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates by using a chemical solution deposition method. The improved electrical properties were observed in the BGFVO thin film. The leakage current density of the co-doped BGFVO thin film showed two orders lower than that of the pure BFO, 8.1×10 −5 A/cm 2 at 100 kV/cm. The remnant polarization (2 P r ) and the coercive electric field (2 E c ) of the BGFVO thin film were 54 μC/cm 2 and 1148 kV/cm with applied electric field of 1100 kV/cm at a frequency of 1 kHz, respectively. The 2 P r values of the BGFVO thin film show the dependence of measurement frequency, and it has been fairly saturated at about 30 kHz.